900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




NXP Semiconductors Electronic Components Datasheet

PSMN069-100YS Datasheet

N-channel LFPAK standard level MOSFET

No Preview Available !

www.DataSheet.co.kr
PSMN069-100YS
N-channel LFPAK 100 V 72.4 mstandard level MOSFET
Rev. 02 — 25 October 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ Advanced TrenchMOS provides low
RDSon and low gate charge
„ High efficiency gains in switching
power converters
„ Improved mechanical and thermal
characteristics
„ LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
„ DC-to-DC converters
„ Lithium-ion battery protection
„ Load switching
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS drain-source voltage Tj 25 °C; Tj 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 5 A;
Tj = 100 °C; see Figure 12
VGS = 10 V; ID = 5 A;
Tj = 25 °C; see Figure 13
Min Typ Max Unit
- - 100 V
- - 17 A
- - 56 W
-55 -
175 °C
- - 130 m
- 56.6 72.4 m
Datasheet pdf - http://www.DataSheet4U.net/


NXP Semiconductors Electronic Components Datasheet

PSMN069-100YS Datasheet

N-channel LFPAK standard level MOSFET

No Preview Available !

www.DataSheet.co.kr
NXP Semiconductors
PSMN069-100YS
N-channel LFPAK 100 V 72.4 mstandard level MOSFET
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 15 A;
VDS = 50 V; see Figure 14;
see Figure 15
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C;
ID = 17 A; Vsup 100 V;
unclamped; RGS = 50
Min Typ Max Unit
- 4.8 - nC
- 14 - nC
- - 24 mJ
2. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S source
S source
S source
G gate
D mounting base; connected to
drain
Simplified outline
mb
1234
SOT669 (LFPAK)
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN069-100YS
LFPAK
Description
Version
plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
PSMN069-100YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 October 2010
© NXP B.V. 2010. All rights reserved.
2 of 15
Datasheet pdf - http://www.DataSheet4U.net/


Part Number PSMN069-100YS
Description N-channel LFPAK standard level MOSFET
Maker NXP Semiconductors
PDF Download

PSMN069-100YS Datasheet PDF






Similar Datasheet

1 PSMN069-100YS N-channel LFPAK standard level MOSFET
NXP Semiconductors
2 PSMN069-100YS N-channel MOSFET
nexperia





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy