PSMN045-80YS
description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment.
1.2 Features and benefits
- Advanced Trench MOS provides low RDSon and low gate charge
- High efficiency gains in switching power converters
- Improved mechanical and thermal characteristics
- LFPAK provides maximum power density in a Power SO8 package
1.3 Applications
- DC-to-DC converters
- Lithium-ion battery protection
- Load switching
- Motor control
- Server power supplies
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain current total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 5 A; Tj = 100 °C; see Figure 13 VGS = 10 V; ID = 5 A; Tj = 25 °C Conditions Tmb = 25 °C; VGS = 10 V Tmb = 25 °C; see Figure 2 Min -55 Typ 37 Max Unit 80 24 56 175 72 45 V A W °C mΩ mΩ drain-source voltage Tj ≥ 25 °C;...
