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PSMN027-100BS Datasheet

MOSFET

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PSMN027-100BS
N-channel 100V 26.8 mstandard level MOSFET in D2PAK.
Rev. 2 — 1 March 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 15 A; Tj = 100 °C;
see Figure 12
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 13
VGS = 10 V; ID = 30 A; VDS = 50 V;
see Figure 14; see Figure 15
VGS = 10 V; Tj(init) = 25 °C; ID = 37 A;
Vsup 100 V; unclamped; RGS = 50
Min Typ Max Unit
- - 100 V
- - 37 A
- - 103 W
-55 -
175 °C
- - 48 m
- 21 26.8 m
- 9 - nC
- 30 - nC
- - 59 mJ


NXP Semiconductors Electronic Components Datasheet

PSMN027-100BS Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
PSMN027-100BS
N-channel 100V 26.8 mstandard level MOSFET in D2PAK.
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain[1]
S source
D mounting base; connected to drain
[1] It is not possible to make connection to pin 2
Simplified outline
mb
2
13
SOT404 (D2PAK)
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN027-100BS
D2PAK
4. Limiting values
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
IDM
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
Conditions
Tj 25 °C; Tj 175 °C
Tj 175 °C; Tj 25 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C;
see Figure 3
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 37 A;
Vsup 100 V; unclamped; RGS = 50
Min Max Unit
- 100 V
- 100 V
-20 20 V
- 26 A
- 37 A
- 148 A
- 103 W
-55 175 °C
-55 175 °C
- 260 °C
- 37 A
- 148 A
- 59 mJ
PSMN027-100BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 March 2012
© NXP B.V. 2012. All rights reserved.
2 of 14


Part Number PSMN027-100BS
Description MOSFET
Maker NXP Semiconductors
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