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NXP Semiconductors Electronic Components Datasheet

PSMN023-40YLC Datasheet

MOSFET

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PSMN023-40YLC
N-channel 40 V 23mΩ logic level MOSFET in LFPAK using
NextPower technology
22 August 2012
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High reliability Power SO8 package, qualified to 175°C
Low parasitic inductance
Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads
1.3 Applications
DC-to-DC converters
Load switching
Server power supplies
Synchronous buck regulator
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Tj junction temperature
Static characteristics
RDSon
drain-source on-state VGS = 4.5 V; ID = 5 A; Tj = 25 °C;
resistance
Fig. 12
VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 12
Dynamic characteristics
QGD
gate-drain charge
VGS = 4.5 V; ID = 5 A; VDS = 20 V;
Fig. 14; Fig. 15
Min Typ Max Unit
- - 40 V
- - 24 A
- - 25 W
-55 -
175 °C
- 22 26 mΩ
- 19 23 mΩ
- 0.9 - nC
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NXP Semiconductors Electronic Components Datasheet

PSMN023-40YLC Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
Symbol
QG(tot)
Parameter
total gate charge
PSMN023-40YLC
N-channel 40 V 23mΩ logic level MOSFET in LFPAK using NextPower
technology
Conditions
VGS = 4.5 V; ID = 5 A; VDS = 20 V;
Fig. 14; Fig. 15
Min Typ Max Unit
- 4.3 - nC
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
mb
2 S source
3 S source
4G
mb D
gate
mounting base; connected to
drain
1234
LFPAK; Power-
SO8 (SOT669)
Graphic symbol
D
G
mbb076 S
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN023-40YLC
LFPAK;
Power-SO8
Description
plastic single-ended surface-mounted package; 4 leads
Version
SOT669
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C
VDGR
drain-gate voltage
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
VGS gate-source voltage
ID drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
VGS = 10 V; Tmb = 100 °C; Fig. 1
IDM peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
VESD
PSMN023-40YLC
electrostatic discharge voltage MM (JEDEC JESD22-A115)
All information provided in this document is subject to legal disclaimers.
Product data sheet
22 August 2012
Min Max Unit
- 40 V
- 40 V
-20 20
V
- 24 A
- 17 A
- 97 A
- 25 W
-55 175 °C
-55 175 °C
- 260 °C
100 -
V
© NXP B.V. 2012. All rights reserved
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Part Number PSMN023-40YLC
Description MOSFET
Maker NXP Semiconductors
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