PSMN017-80BS
description
Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment.
1.2 Features and benefits
- High efficiency due to low switching and conduction losses
- Suitable for standard level gate drive sources
1.3 Applications
- DC-to-DC converters
- Load switching
- Motor control
- Server power supplies
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 10 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 13 Dynamic characteristics QGD QG(tot) EDS(AL)S gate-drain charge total gate charge non-repetitive drain-source avalanche energy VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15 6 26 55 n C n C m J Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10...
