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NXP Semiconductors Electronic Components Datasheet

PSMN017-30EL Datasheet

MOSFET

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PSMN017-30EL
N-channel 30 V 17 mlogic level MOSFET in I2PAK
Rev. 2 — 3 April 2012
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in I2PAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for logic level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
VDS
ID
Parameter
drain-source voltage
drain current
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Min
-
[1] -
Ptot total power dissipation
Tj junction temperature
Static characteristics
Tmb = 25 °C; see Figure 2
-
-55
RDSon
drain-source on-state resistance VGS = 4.5 V; ID = 10 A; Tj = 25 °C;
see Figure 13
-
VGS = 10 V; ID = 10 A; Tj = 25 °C;
see Figure 13
-
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
VGS = 4.5 V; ID = 10 A; VDS = 15 V;
see Figure 14; see Figure 15
-
-
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 32 A;
Vsup 30 V; RGS = 50 ; unclamped
-
[1] Continuous current is limited by package.
Typ Max Unit
- 30 V
- 32 A
- 47 W
- 175 °C
18.7 23.4 m
13.4 17
m
1.94 -
5.1 -
nC
nC
- 13 mJ


NXP Semiconductors Electronic Components Datasheet

PSMN017-30EL Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
PSMN017-30EL
N-channel 30 V 17 mlogic level MOSFET in I2PAK
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain
S source
D mounting base; connected to drain
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT226 (I2PAK)
Table 3. Ordering information
Type number
Package
Name
PSMN017-30EL
I2PAK
4. Limiting values
Description
plastic single-ended package (I2PAK); TO-262
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
IDM
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
Conditions
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C;
see Figure 3
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 32 A;
Vsup 30 V; RGS = 50 ; unclamped
[1] Continuous current is limited by package.
Version
SOT226
Min
-
-
-20
[1] -
[1] -
-
Max Unit
30 V
30 V
20 V
25.5 A
32 A
154 A
- 47 W
-55 175 °C
-55 175 °C
- 32 A
- 154 A
- 13 mJ
PSMN017-30EL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 April 2012
© NXP B.V. 2012. All rights reserved.
2 of 14


Part Number PSMN017-30EL
Description MOSFET
Maker NXP Semiconductors
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