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NXP Semiconductors Electronic Components Datasheet

PSMN017-30BL Datasheet

MOSFET

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PSMN017-30BL
N-channel 30 V 17 mlogic level MOSFET in D2PAK
Rev. 2 — 3 April 2012
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for logic level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Min
Tj 25 °C; Tj 175 °C
-
Tmb = 25 °C; VGS = 10 V; see Figure 1 [1] -
Tmb = 25 °C; see Figure 2
-
-55
VGS = 4.5 V; ID = 10 A; Tj = 25 °C;
see Figure 13
VGS = 10 V; ID = 10 A; Tj = 25 °C;
see Figure 13
-
-
VGS = 4.5 V; ID = 10 A; VDS = 15 V;
see Figure 14; see Figure 15
-
-
VGS = 10 V; Tj(init) = 25 °C; ID = 32 A;
Vsup 30 V; RGS = 50 ; unclamped
-
[1] Continuous current is limited by package.
Typ Max Unit
- 30 V
- 32 A
- 47 W
- 175 °C
18.6 23.3 m
13.3 17
m
1.94 -
5.1 -
nC
nC
- 13 mJ


NXP Semiconductors Electronic Components Datasheet

PSMN017-30BL Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
PSMN017-30BL
N-channel 30 V 17 mlogic level MOSFET in D2PAK
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain
S source
D mounting base; connected to drain
Simplified outline
mb
2
13
SOT404 (D2PAK)
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN017-30BL
D2PAK
4. Limiting values
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
IDM
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
Conditions
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C;
see Figure 3
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 32 A;
Vsup 30 V; RGS = 50 ; unclamped
Min
-
-
-20
[1] -
[1] -
-
-
-55
-55
-
-
-
[1] Continuous current is limited by package.
Max Unit
30 V
30 V
20 V
25.5 A
32 A
154 A
47 W
175 °C
175 °C
32 A
154 A
13 mJ
PSMN017-30BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 April 2012
© NXP B.V. 2012. All rights reserved.
2 of 14


Part Number PSMN017-30BL
Description MOSFET
Maker NXP Semiconductors
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