PSMN016-100PS Datasheet | NXP Semiconductors

description Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - High efficiency due to low switching and conduction losses - Suitable for standard level gate drive 1.3 Applications - DC-to-DC converters - Load switching - Motor control - Server power supplies 1.4 Quick reference data Table 1. VDS ID Ptot Tj Quick reference Conditions Tj = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 VGS = 10 V; Tj(init) = 25 °C; ID = 60 A; Vsup ≤ 100 V; unclamped; RGS = 50 Ω VGS = 10 V; ID = 30 A; VDS = 50 V; see Figure 14 and 15 VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13 Typ Max 100 96 148 175 101 Unit V A W °C m J drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation junction temperature Symbol Parameter Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge 15 49 n C n C Static characteristics RDSon drain-source on-state resistance 13 28.8 16 mΩ mΩ .. NXP Semiconductors N-channel 100V 16 mΩ standard level MOSFET in TO220 2. Pinning information Table 2. Pin 1 2 3 mb S G D S D Pinning information Symbol Description source gate drain source mounting base; connected to drain mbb076 Simplified outline mb Graphic symbol 1 2 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Package Name PSMN016-100PS TO-220AB Description Version plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78 TO-220AB Type number PSMN016-100PS_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 - 1 March 2010 2 of 15 .. NXP Semiconductors N-channel 100V 16 mΩ standard...