PSMN015-110P Datasheet | NXP Semiconductors

Description Silicon MAX™ products use the latest Philips Trench MOS™ technology to achieve the lowest possible on-state resistance in each package. 1.2 Features s Low on-state resistance s Low gate charge. 1.3 Applications s DC-to-DC converters s Switched-mode power supplies. 1.4 Quick reference data s VDS ≤ 110 V s Ptot ≤ 300 W s ID ≤ 75 A s RDSon ≤ 15 mΩ 2. Pinning information Table 1: 1 2 3 mb Pinning - SOT78, simplified outlines and symbol Simplified outline mb Pin Description gate (g) drain (d) source (s) mounting base; connected to drain (d) Symbol d g s MBB076 MBK106 1 2 3 SOT78 (TO-220AB) .. Philips Semiconductors Trench MOS™ Standard level FET 3. Ordering information Table 2: Ordering information Package Name PSMN015-110P TO-220AB Description Version Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 36 A; tp = 0.11 ms; VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; starting Tj = 25 °C Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Conditions 25 °C ≤ Tj ≤ 175 °C 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ Min - 55 - 55 Max 110 110 ±20 75 60.8 240 300 +175 +175 75 240 320 Unit V V V A A A W °C °C A A m J Source-drain diode Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 9397 750 12544 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data Rev. 01 - 08 January 2004 2 of 12 .. Philips...