PSMN013-30MLC Datasheet | NXP Semiconductors

description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - Low parasitic inductance and resistance - Optimised for 4.5V Gate drive utilising Next Power Superjunction technology - Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads 1.3 Applications - DC-to-DC converters - Load switching - Synchronous buck regulator 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 4.5 V; ID = 10 A; Tj = 25 °C; see Figure 10 VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 10 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 4.5 V; ID = 10 A; VDS = 15 V; see Figure 12; see Figure 13 VGS = 4.5 V; ID = 10 A; VDS = 15 V; see Figure 12; see Figure 13 1 3.7 n C n C Conditions Tj = 25 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 Typ 14.65 11.8 Max 30 39 38 175 16.9 13.6 Unit V A W °C mΩ mΩ Static characteristics NXP Semiconductors N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using Next Power Technology 2. Pinning information Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to drain 1 2 3 4 mbb076 Simplified outline Graphic symbol SOT1210 (LFPAK33) 3. Ordering information Table 3. Ordering information Package Name PSMN013-30MLC LFPAK33 Description Plastic single ended surface mounted package (LFPAK33); 4 leads Version SOT1210 Type number 4. Limiting values Table 4. Symbol VDS VGS ID IDM Ptot Tstg Tj Tsld(M) VESD IS ISM EDS(AL)S Limiting values Parameter drain-source voltage gate-source voltage drain current peak drain current total power dissipation storage temperature...