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PSMN013-30MLC Datasheet

MOSFET

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PSMN013-30MLC
N-channel 30 V 13.6 mlogic level MOSFET in LFPAK33
using NextPower Technology
Rev. 4 — 15 June 2012
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
Low parasitic inductance and
resistance
Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology
Ultra low QG, QGD, & QOSS for high
system efficiencies at low and high
loads
1.3 Applications
DC-to-DC converters
Load switching
Synchronous buck regulator
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Conditions
Tj = 25 °C
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 4.5 V; ID = 10 A; Tj = 25 °C;
see Figure 10
VGS = 10 V; ID = 10 A; Tj = 25 °C;
see Figure 10
VGS = 4.5 V; ID = 10 A; VDS = 15 V;
see Figure 12; see Figure 13
VGS = 4.5 V; ID = 10 A; VDS = 15 V;
see Figure 12; see Figure 13
Min Typ Max Unit
- - 30 V
- - 39 A
- - 38 W
-55 -
175 °C
- 14.65 16.9 m
- 11.8 13.6 m
- 1 - nC
- 3.7 - nC


NXP Semiconductors Electronic Components Datasheet

PSMN013-30MLC Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
PSMN013-30MLC
N-channel 30 V 13.6 mlogic level MOSFET in LFPAK33 using NextPower Technology
2. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
Simplified outline
S source
S source
S source
G gate
D mounting base; connected to
drain
1234
SOT1210 (LFPAK33)
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN013-30MLC
LFPAK33
4. Limiting values
Description
Plastic single ended surface mounted package (LFPAK33);
4 leads
Version
SOT1210
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 10 V; Tmb = 25 °C; see Figure 1
VGS = 10 V; Tmb = 100 °C; see Figure 1
IDM peak drain current
pulsed; tp 10 µs; Tmb = 25 °C;
see Figure 4
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
VESD
electrostatic discharge voltage
Source-drain diode
Tmb = 25 °C; see Figure 2
MM (JEDEC JESD22-A115)
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 39 A;
Vsup 30 V; RGS = 50 ; unclamped;
see Figure 3
Min Max Unit
- 30 V
-20 20 V
- 39 A
- 28 A
- 157 A
- 38 W
-55 175 °C
-55 175 °C
- 260 °C
100 -
V
- 34 A
- 157 A
- 5.6 mJ
PSMN013-30MLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 15 June 2012
© NXP B.V. 2012. All rights reserved.
2 of 14


Part Number PSMN013-30MLC
Description MOSFET
Maker NXP Semiconductors
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