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NXP Semiconductors Electronic Components Datasheet

PSMN013-30LL Datasheet

MOSFET

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PSMN013-30LL
N-channel 30 V 13 mlogic level MOSFET
Rev. 01 — 18 February 2010
Objective data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is
designed and qualified for use in a wide range of industrial, communications and power
supply equipment.
1.2 Features and benefits
„ High efficiency due to low switching
and conduction losses
„ Small footprint for compact designs
„ Suitable for logic level gate drive
sources
1.3 Applications
„ Battery protection
„ DC-to-DC converters
„ Load switching
„ Power ORing
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj 25 °C; Tj 150 °C
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Tj junction temperature
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 8 A;
VDS = 15 V; see Figure 12
and 13
Static characteristics
RDSon drain-source
on-state resistance
Avalanche ruggedness
VGS = 10 V; ID = 7.5 A;
Tj = 100 °C; see Figure 10
VGS = 10 V; ID = 7.5 A;
Tj = 25 °C; see Figure 11
EDS(AL)S non-repetitive
drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C;
ID = 40 A; Vsup 30 V;
unclamped; RGS = 50
Min Typ Max Unit
- - 30 V
- - 21 A
- - 41 W
-55 -
150 °C
- 1.7 - nC
- 12.2 - nC
- - 17.9 m
- 11 13 m
- - 13 mJ


NXP Semiconductors Electronic Components Datasheet

PSMN013-30LL Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
PSMN013-30LL
N-channel 30 V 13 mlogic level MOSFET
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1S
source
2S
source
3S
source
4G
gate
5,6,7,8 D
mounting base; connected to
drain
3. Ordering information
Simplified outline
8765
Graphic symbol
D
1234
Transparent
top view
SOT873-1 (HVSON8)
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
Description
PSMN013-30LL HVSON8
plastic thermal enhanced very thin small outline package; no leads; 8
terminals; body 3.3 x 3.3 x 0.85 mm
4. Limiting values
Version
SOT873-1
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
IDM
Ptot
Tstg
Tj
Tsld(M)
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering
temperature
Conditions
Tj 25 °C; Tj 150 °C
Tj 150 °C; Tj 25 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
tp 10 µs; pulsed; Tmb = 25 °C
Tmb = 25 °C; see Figure 2
Source-drain diode
IS source current Tmb = 25 °C
ISM peak source current tp 10 µs; pulsed; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 40 A; Vsup 30 V;
drain-source avalanche unclamped; RGS = 50
energy
Min Max Unit
- 30 V
- 30 V
-20 20
V
- 21 A
- 21 A
- 169 A
- 41 W
-55 150 °C
-55 150 °C
- 260 °C
- 42 A
- 169 A
- 13 mJ
PSMN013-30LL_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 18 February 2010
© NXP B.V. 2010. All rights reserved.
2 of 13


Part Number PSMN013-30LL
Description MOSFET
Maker NXP Semiconductors
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