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NXP Semiconductors Electronic Components Datasheet

PSMN012-80PS Datasheet

MOSFET

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PSMN012-80PS
N-channel 80 V 11 mstandard level MOSFET
Rev. 02 — 25 June 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ High efficiency due to low switching
and conduction losses
„ Suitable for standard level gate drive
sources
1.3 Applications
„ DC-to-DC converters
„ Load switching
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj 25 °C; Tj 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
- - 80 V
- - 74 A
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
- - 148 W
Dynamic characteristics
QGD
gate-drain charge VGS = 10 V; ID = 25 A;
VDS = 40 V; see Figure 14;
see Figure 15
- 9.4 - nC
Static characteristics
RDSon drain-source
on-state resistance
VGS = 10 V; ID = 15 A;
Tj = 25 °C;
[1] -
9 11 m
[1] Measured 3 mm from package.


NXP Semiconductors Electronic Components Datasheet

PSMN012-80PS Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1G
gate
2D
drain
3S
source
mb D
mounting base; connected to
drain
PSMN012-80PS
N-channel 80 V 11 mstandard level MOSFET
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78
(TO-220AB; SC-46)
Table 3. Ordering information
Type number
Package
Name
Description
Version
PSMN012-80PS TO-220AB; plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
SC-46
TO-220AB
PSMN012-80PS_2
Product data sheet
Rev. 02 — 25 June 2009
© NXP B.V. 2009. All rights reserved.
2 of 13


Part Number PSMN012-80PS
Description MOSFET
Maker NXP Semiconductors
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