PSMN012-25YLC
description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment.
1.2 Features and benefits
- High reliability Power SO8 package, qualified to 175°C
- Low parasitic inductance and resistance
- Optimised for 4.5V Gate drive utilising Next Power Superjunction technology
- Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads
1.3 Applications
- DC-to-DC converters
- Load switching
- Synchronous buck regulator
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics
RDSon drain-source on-state resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot) total gate charge
Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2
VGS = 4.5 V; ID = 10 A; Tj = 25...
