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NXP Semiconductors Electronic Components Datasheet

PSMN011-30YLC Datasheet

MOSFET

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PSMN011-30YLC
N-channel 30 V 11.6 mlogic level MOSFET in LFPAK using
NextPower technology
Rev. 3 — 24 October 2011
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High reliability Power SO8 package,
qualified to 175°C
Low parasitic inductance and
resistance
Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology
Ultra low QG, QGD, & QOSS for high
system efficiencies at low and high
loads
1.3 Applications
DC-to-DC converters
Load switching
Synchronous buck regulator
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
Conditions
25 °C Tj 175 °C
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; see Figure 2
RDSon
drain-source on-state resistance VGS = 4.5 V; ID = 10 A; Tj = 25 °C;
see Figure 12
VGS = 10 V; ID = 10 A; Tj = 25 °C;
see Figure 12
Dynamic characteristics
QGD gate-drain charge
VGS = 4.5 V; ID = 10 A; VDS = 15 V; see
Figure 14; see Figure 15
QG(tot)
total gate charge
VGS = 4.5 V; ID = 10 A; VDS = 15 V; see
Figure 14; see Figure 15
Min Typ Max Unit
- - 30 V
- - 37 A
- - 29 W
-55 -
175 °C
- 12.3 14.5 m
- 9.9 11.6 m
- 1.4 - nC
- 4.9 - nC


NXP Semiconductors Electronic Components Datasheet

PSMN011-30YLC Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
PSMN011-30YLC
N-channel 30 V 11.6 mlogic level MOSFET in LFPAK using NextPower technology
2. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S source
S source
S source
G gate
D mounting base; connected to drain
Simplified outline
mb
1234
SOT669 (LFPAK; Power-SO8)
Graphic symbol
D
G
mbb076 S
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN011-30YLC LFPAK; Power-SO8
Description
plastic single-ended surface-mounted package; 4 leads
4. Limiting values
Version
SOT669
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
IDM
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
Conditions
25 °C Tj 175 °C
25 °C Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 25 °C; see Figure 1
VGS = 10 V; Tmb = 100 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C;
see Figure 4
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
VESD
electrostatic discharge voltage
Source-drain diode
Tmb = 25 °C; see Figure 2
MM (JEDEC JESD22-A115)
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 37 A;
Vsup 30 V; RGS = 50 ; unclamped;
see Figure 3
Min Max Unit
- 30 V
- 30 V
-20 20 V
- 37 A
- 26 A
- 150 A
- 29 W
-55 175 °C
-55 175 °C
- 260 °C
140 -
V
- 26 A
- 150 A
- 9 mJ
PSMN011-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 24 October 2011
© NXP B.V. 2011. All rights reserved.
2 of 15


Part Number PSMN011-30YLC
Description MOSFET
Maker NXP Semiconductors
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PSMN011-30YLC Datasheet PDF






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