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NXP Semiconductors Electronic Components Datasheet

PSMN011-30YL Datasheet

MOSFET

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PSMN011-30YL
N-channel 10.7 m30 V TrenchMOS logic level FET in LFPAK
Rev. 2 — 17 May 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
industrial and communications applications.
1.2 Features and benefits
„ High efficiency due to low switching
and conduction losses
„ Suitable for logic level gate drive
sources
1.3 Applications
„ Class-D amplifiers
„ DC-to-DC converters
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS drain-source voltage
ID drain current
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot total power dissipation
Static characteristics
Tmb = 25 °C; see Figure 2
RDSon
drain-source on-state
resistance
Dynamic characteristics
VGS = 10 V; ID = 15 A;
Tj = 25 °C
QGD gate-drain charge
VGS = 10 V; ID = 45 A;
VDS = 15 V; see Figure 14;
see Figure 15
QG(tot)
total gate charge
VGS = 4.5 V; ID = 45 A;
VDS = 15 V; see Figure 14;
see Figure 15
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source VGS = 10 V; Tj(init) = 25 °C;
avalanche energy
ID = 51 A; Vsup 30 V;
RGS = 50 ; unclamped
Min Typ Max Unit
- - 30 V
- - 51 A
- - 49 W
- 9 10.7 m
- 3.5 - nC
- 7.3 - nC
- - 14 mJ


NXP Semiconductors Electronic Components Datasheet

PSMN011-30YL Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
PSMN011-30YL
N-channel 10.7 m30 V TrenchMOS logic level FET in LFPAK
2. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S source
S source
S source
G gate
D mounting base; connected to drain
Simplified outline
mb
1234
SOT669 (LFPAK;
Power-SO8)
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN011-30YL LFPAK; Power-SO8
4. Limiting values
Description
plastic single-ended surface-mounted package; 4 leads
Version
SOT669
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
VDSM
VDGR
VGS
ID
drain-source voltage
peak drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Tj 25 °C; Tj 175 °C
tp 25 ns; f 500 kHz; EDS(AL) 50 nJ; pulsed
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 51 A;
Vsup 30 V; RGS = 50 ; unclamped
Min Max Unit
- 30 V
- 35 V
- 30 V
-20 20
V
- 36 A
- 51 A
- 203 A
- 49 W
-55 175 °C
-55 175 °C
- 51 A
- 203 A
- 14 mJ
PSMN011-30YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 17 May 2011
© NXP B.V. 2011. All rights reserved.
2 of 14


Part Number PSMN011-30YL
Description MOSFET
Maker NXP Semiconductors
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PSMN011-30YL Datasheet PDF






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