PSMN011-30YL
description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product is designed and qualified for use in industrial and munications applications.
1.2 Features and benefits
- High efficiency due to low switching and conduction losses
- Suitable for logic level gate drive sources
1.3 Applications
- Class-D amplifiers
- DC-to-DC converters
- Motor control
- Server power supplies
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance gate-drain charge Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 15 A; Tj = 25 °C VGS = 10 V; ID = 45 A; VDS = 15 V; see Figure 14; see Figure 15 VGS = 4.5 V; ID = 45 A; VDS = 15 V; see Figure 14; see Figure 15 Min Typ 9 Max Unit 30 51 49 V A W
Static characteristics 10.7 mΩ
Dynamic...
