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NXP Semiconductors Electronic Components Datasheet

PSMN006-20K Datasheet

TrenchMOS FET

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PSMN006-20K
TrenchMOS™ ultra low level FET
Rev. 01 — 30 May 2002
Product data
1. Description
SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve
the lowest possible on-state resistance in a SOT96-1 (SO8) package.
Product availability:
PSMN006-20K in SOT96-1 (SO8).
2. Features
s Very low on-state resistance
s Very low threshold
s TrenchMOS™ technology.
3. Applications
s DC to DC converter
s Computer motherboards
s Switch mode power supplies.
4. Pinning information
Table 1:
Pin
1,2,3
4
5,6,7,8
Pinning - SOT96-1, simplified outline and symbol
Description
Simplified outline
source (s)
gate (g)
85
drain (d)
1
Top view
4
MBK187
SOT96-1 (SO8)
Symbol
d
g
MBB076
s


NXP Semiconductors Electronic Components Datasheet

PSMN006-20K Datasheet

TrenchMOS FET

No Preview Available !

Philips Semiconductors
www.DataSheet4U.com
PSMN006-20K
TrenchMOS™ ultra low level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
25 °C Tj 150 °C
Tsp = 25 °C; VGS = 4.5 V
Tsp = 25 °C
VGS = 4.5 V; ID = 5 A; Tj = 25 °C
VGS = 2.5 V; ID = 5 A; Tj = 25 °C
VGS = 1.8 V; ID = 5 A; Tj = 25 °C
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage (DC)
ID drain current (DC)
VGS gate-source voltage
IDM peak drain current
Ptot total power dissipation
25 °C Tj 150 °C
Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3
Tsp = 25 °C; pulsed; tp 10 µs; Figure 3
Tsp = 25 °C; Figure 1
Tstg storage temperature
Tj operating junction temperature
Source-drain diode
IS source (diode forward) current (DC) Tsp = 25 °C
ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp 10 µs
Typ Max Unit
- 20 V
- 32 A
- 8.3 W
- 150 °C
4.2 5
m
4.8 5.7 m
5.7 8.2 m
Min Max Unit
- 20 V
- 32 A
- ±10 V
- 60 A
- 8.3 W
- 150 °C
55 +150 °C
- 7.5 A
- 30 A
9397 750 09631
Product data
Rev. 01 — 30 May 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
2 of 12


Part Number PSMN006-20K
Description TrenchMOS FET
Maker NXP Semiconductors
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