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PSMN005-75P Datasheet

N-Channel MOSFET

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PSMN005-75P
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 01 — 17 November 2009
Product data sheet
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
„ High frequency computer motherboard
DC-to-DC convertors
„ OR-ing applicationss
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj 25 °C; Tj 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1 and 3
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 75 A;
VDS = 60 V; Tj = 25 °C;
see Figure 11
Static characteristics
RDSon
drain-source
VGS = 10 V; ID = 25 A;
on-state resistance Tj = 25 °C; see Figure 9 and 10
Min Typ Max Unit
- - 75 V
- - 75 A
- - 230 W
- 50 - nC
-
4.3 5
m


NXP Semiconductors Electronic Components Datasheet

PSMN005-75P Datasheet

N-Channel MOSFET

No Preview Available !

NXP Semiconductors
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1G
gate
2D
drain
3S
source
mb D
drain
PSMN005-75P
N-channel TrenchMOS SiliconMAX standard level FET
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78 (TO-220AB)
Table 3. Ordering information
Type number
Package
Name
Description
PSMN005-75P
TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole;
3-lead TO-220AB
Version
SOT78
PSMN005-75P_1
Product data sheet
Rev. 01 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
2 of 13


Part Number PSMN005-75P
Description N-Channel MOSFET
Maker NXP Semiconductors
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