PMZ950UPE datasheet, mosfet equivalent, NXP Semiconductors

Features and benefits

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* Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.48 mm ElectroStatic Discharge (ESD) protection > 1.

Application

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* Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference.

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits
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* Trench MOSFET technol.

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