PMZ950UPE Datasheet | NXP Semiconductors

10 July 2014 T8 83 20 V, P-channel Trench MOSFET Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits - - - - Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.48 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 1.02 Ω 3. Applications - - - - Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick...