Datasheet4U Logo Datasheet4U.com

PMZ950UPE - P-channel Trench MOSFET

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.48 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 1.02 Ω 3.

📥 Download Datasheet

Datasheet Details

Part number PMZ950UPE
Manufacturer NXP Semiconductors
File Size 228.47 KB
Description P-channel Trench MOSFET
Datasheet download datasheet PMZ950UPE Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMZ950UPE P-channel MOSFET nexperia
PMZ950UPEL P-channel MOSFET nexperia
PMZ1200UPE P-channel Trench MOSFET NXP
PMZ1200UPE P-channel MOSFET nexperia
PMZ130UNE N-channel Trench MOSFET NXP

Other Datasheets by NXP Semiconductors

Part Number Description
PMZ1000UN N-channel TrenchMOS standard level FET
PMZ250UN N-channel TrenchMOS extremely low level FET
PMZ270XN N-channel TrenchMOS extremely low level FET
PMZ350XN N-channel TrenchMOS standard level FET
PMZ390UN N-channel TrenchMOS standard level FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PMZ950UPE 10 July 2014 SO T8 83 20 V, P-channel Trench MOSFET Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.48 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 1.02 Ω 3. Applications • • • • Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = -4.
Datasheet originally released: |