900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




NXP Semiconductors Electronic Components Datasheet

PMPB33XN Datasheet

MOSFET

No Preview Available !

PMPB33XN
30 V single N-channel Trench MOSFET
6 July 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Trench MOSFET technology
Very fast switching
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
1.3 Applications
Charging switch for portable devices
DC-to-DC converters
Power management in battery-driven portables
Hard disk and computing power management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; ID = 4.3 A; Tj = 25 °C
Min Typ Max Unit
- - 30 V
-12 -
12 V
[1] - - 5.5 A
- 37 47 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
Scan or click this QR code to view the latest information for this product


NXP Semiconductors Electronic Components Datasheet

PMPB33XN Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
PMPB33XN
30 V single N-channel Trench MOSFET
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 D drain
2 D drain
3 G gate
4 S source
5 D drain
6 D drain
7 D drain
8 S source
Simplified outline
16
7
25
Graphic symbol
D
G
384
Transparent top view
DFN2020MD-6 (SOT1220)
S
017aaa253
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
PMPB33XN
DFN2020MD-6 plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals
Version
SOT1220
4. Marking
Table 4. Marking codes
Type number
PMPB33XN
Marking code
1P
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
PMPB33XN
All information provided in this document is subject to legal disclaimers.
Product data sheet
6 July 2012
[1]
[1]
[1]
[1]
Min Max Unit
- 30 V
-12 12
V
- 5.5 A
- 4.3 A
- 2.7 A
- 17 A
- 1.5 W
© NXP B.V. 2012. All rights reserved
2 / 14


Part Number PMPB33XN
Description MOSFET
Maker NXP Semiconductors
Total Page 14 Pages
PDF Download

PMPB33XN Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 PMPB33XN MOSFET
NXP Semiconductors
2 PMPB33XN N-channel MOSFET
nexperia
3 PMPB33XP single P-channel Trench MOSFET
NXP
4 PMPB33XP P-channel MOSFET
nexperia





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy