PMPB33XN
PMPB33XN is MOSFET manufactured by NXP Semiconductors.
description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
- Trench MOSFET technology
- Very fast switching
- Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
- Exposed drain pad for excellent thermal conduction
- Tin-plated 100 % solderable side pads for optical solder inspection 1.3 Applications
- Charging switch for portable devices
- DC-to-DC converters
- Power management in battery-driven portables
- Hard disk and puting power management 1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 4.3 A; Tj = 25 °C
[1]
Conditions Tj = 25 °C
Min -12
- Typ
- Max 30 12 5.5
Unit V V A
Static characteristics drain-source on-state resistance
[1]
- 37
47 mΩ
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .
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NXP Semiconductors
30 V single N-channel Trench MOSFET
2. Pinning information
Table 2. Pin 1 2 3 4 5 6 7 8 Pinning information Symbol Description
D D G S D D D S drain drain gate source drain drain drain source Simplified outline
1 2 3 7 6 5 4
017aaa253
Graphic symbol
Transparent top view
DFN2020MD-6 (SOT1220)
3. Ordering information
Table 3. Ordering information Package Name PMPB33XN...
