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NXP Semiconductors Electronic Components Datasheet

PMN50UPE Datasheet

MOSFET

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PMN50UPE
20 V, single P-channel Trench MOSFET
20 July 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
3 kV ESD protected
Trench MOSFET technology
Low threshold voltage
1.3 Applications
Relay driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - -20 V
VGS gate-source voltage
-8 -
8V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -4 A
Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -3.6 A; Tj = 25 °C
resistance
- 50 66 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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NXP Semiconductors Electronic Components Datasheet

PMN50UPE Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
PMN50UPE
20 V, single P-channel Trench MOSFET
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 D drain
2 D drain
3 G gate
4 S source
5 D drain
6 D drain
Simplified outline
654
Graphic symbol
D
123
TSOP6 (SOT457)
G
S
017aaa259
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMN50UPE
TSOP6
Description
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
4. Marking
Table 4. Marking codes
Type number
PMN50UPE
Marking code
WH
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
PMN50UPE
Product data sheet
Tsp = 25 °C
All information provided in this document is subject to legal disclaimers.
20 July 2012
[1]
[1]
[1]
[2]
[1]
Min Max Unit
- -20 V
-8 8
V
- -4 A
- -3.6 A
- -2.3 A
- -14.4 A
- 510 mW
- 1235 mW
- 5000 mW
© NXP B.V. 2012. All rights reserved
2 / 13


Part Number PMN50UPE
Description MOSFET
Maker NXP Semiconductors
Total Page 13 Pages
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