PMN50UPE
description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
- 3 k V ESD protected
- Trench MOSFET technology
- Low threshold voltage 1.3 Applications
- Relay driver
- High-side loadswitch
- Switching circuits 1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.5 V; ID = -3.6 A; Tj = 25 °C
[1]
Conditions Tj = 25 °C
Min -8
- Typ
- Max -20 8 -4
Unit V V A
Static characteristics drain-source on-state resistance
[1]
- 50
66 mΩ
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .
Scan or click this QR code to view the latest information for this product
NXP Semiconductors
20 V, single P-channel Trench MOSFET
2. Pinning...
