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NXP Semiconductors Electronic Components Datasheet

PMN27XPE Datasheet

MOSFET

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PMN27XPE
20 V, single P-channel Trench MOSFET
20 September 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Fast switching
Trench MOSFET technology
2 kV ESD protection
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tamb = 25 °C
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; ID = -3 A; Tj = 25 °C
Min Typ Max Unit
- - -20 V
-12 -
12 V
[1] - - -5.7 A
- 27 30 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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NXP Semiconductors Electronic Components Datasheet

PMN27XPE Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
PMN27XPE
20 V, single P-channel Trench MOSFET
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 D drain
2 D drain
3 G gate
4 S source
5 D drain
6 D drain
Simplified outline
654
Graphic symbol
D
123
TSOP6 (SOT457)
G
S
017aaa259
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMN27XPE
TSOP6
Description
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
4. Marking
Table 4. Marking codes
Type number
PMN27XPE
Marking code
WC
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tamb = 25 °C
VGS gate-source voltage
ID drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
PMN27XPE
Product data sheet
Tsp = 25 °C
All information provided in this document is subject to legal disclaimers.
20 September 2012
[1]
[1]
[1]
[2]
[1]
Min Max Unit
- -20 V
-12 12
V
- -5.7 A
- -4.4 A
- -3.5 A
- -22 A
- 530 mW
- 1250 mW
- 8330 mW
© NXP B.V. 2012. All rights reserved
2 / 13


Part Number PMN27XPE
Description MOSFET
Maker NXP Semiconductors
Total Page 13 Pages
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