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PMN27UN Datasheet

TrenchMOS ultra low level FET

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PMN27UN
TrenchMOS™ ultra low level FET
Rev. 01 — 27 September 2002
M3D302
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PMN27UN in SOT457 (TSOP6).
2. Features
s TrenchMOS™ technology
s Very fast switching
s Low threshold voltage
s Surface mount package.
3. Applications
s Battery powered motor control
s Load switch in notebook computers
s High speed switch in set top box power supplies
s Driver FET in DC to DC converters.
4. Pinning information
www.DataSheet4U.com
Table 1: Pinning - SOT457 (TSOP6), simplified outline and symbol
Pin Description
Simplified outline
1,2,5,6
3
drain (d)
gate (g)
654
4 source (s)
12 3
Top view
MBK092
SOT457 (TSOP6)
Symbol
d
g
MBB076
s


NXP Semiconductors Electronic Components Datasheet

PMN27UN Datasheet

TrenchMOS ultra low level FET

No Preview Available !

Philips Semiconductors
PMN27UN
TrenchMOS™ ultra low level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
25 °C Tj 150 °C
Tsp = 25 °C; VGS = 4.5 V
Tsp = 25 °C
VGS = 4.5 V; ID = 2 A; Tj = 25 °C
VGS = 2.5 V; ID = 2 A; Tj = 25 °C
VGS = 1.8 V; ID = 1.5 A; Tj = 25 °C
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage (DC)
25 °C Tj 150 °C
VGS gate-source voltage (DC)
ID drain current (DC)
IDM peak drain current
Ptot total power dissipation
Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3
Tsp = 70 °C; VGS = 4.5 V; Figure 2
Tsp = 25 °C; pulsed; tp 10 µs; Figure 3
Tsp = 25 °C; Figure 1
Tstg storage temperature
Tj junction temperature
Source-drain diode
www.DIaStaSheet4Us.ocuormce (diode forward) current (DC) Tsp = 25 °C
Typ Max Unit
- 20 V
- 5.7 A
- 1.75 W
- 150 °C
27 34 m
32 40 m
39 56 m
Min Max Unit
- 20 V
- ±8 V
- 5.7 A
- 4.5 A
- 22.9 A
- 1.75 W
55 +150 °C
55 +150 °C
- 1.45 A
9397 750 10189
Product data
Rev. 01 — 27 September 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
2 of 12


Part Number PMN27UN
Description TrenchMOS ultra low level FET
Maker NXP Semiconductors
Total Page 12 Pages
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