PMK35EP fet equivalent, p-channel trenchmos extremely low level fet.
* Low conduction losses due to low on-state resistance
1.3 Applications
* Battery management
* Load switching
1.4 Quick reference data
Table 1. Symbol VDS I.
only.
1.2 Features and benefits
* Low conduction losses due to low on-state resistance
1.3 Applications
* Batt.
Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2.
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