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PMGD780SN - Dual N-channel mTrenchMOS standard level FET

General Description

Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

1.2

Overview

www.DataSheet4U.com PMGD780SN Dual N-channel µTrenchMOS™ standard level FET MBD128 Rev.

01 — 11 February 2004 Product data 1.

Product profile 1.

Key Features

  • s Surface mounted package s Standard level threshold voltage s Low on-state resistance s Footprint 40% smaller than SOT23 s Fast switching s Dual device. 1.3.