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PMGD780SN Datasheet

Dual N-channel mTrenchMOS standard level FET

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PMGD780SN
Dual N-channel µTrenchMOS™ standard level FET
Rev. 01 — 11 February 2004
MBD128
Product data
1. Product profile
1.1 Description
Dual N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
s Surface mounted package
s Standard level threshold voltage
s Low on-state resistance
s Footprint 40% smaller than SOT23
s Fast switching
s Dual device.
1.3 Applications
s Driver circuits
s Switching in portable appliances.
1.4 Quick reference data
s VDS 60 V
s Ptot 0.41 W
s ID 0.49 A
s RDSon 920 m.
2. Pinning information
Table 1:
Pin
1
2
3
4
5
6
Pinning - SOT363 (SC-88), simplified outline and symbol
Description
Simplified outline
source1 (s1)
gate1 (g1)
6 54
drain2 (d2)
source2 (s2)
gate2 (g2)
drain1 (d1)
1 23
Top view
MSA370
SOT363 (SC-88)
Symbol
d1 d2
s1 g1 s2 g2
MSD901


NXP Semiconductors Electronic Components Datasheet

PMGD780SN Datasheet

Dual N-channel mTrenchMOS standard level FET

No Preview Available !

Philips Semiconductors
PMGD780SNwww.DataSheet4U.com
Dual N-channel µTrenchMOS™ standard level FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
Description
PMGD780SN
SC-88
Plastic surface mounted package; 6 leads
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
25 °C Tj 150 °C
25 °C Tj 150 °C; RGS = 20 k
Tsp = 25 °C; VGS = 10 V; Figure 2 and 3
Tsp = 100 °C; VGS = 10 V; Figure 2
Tsp = 25 °C; pulsed; tp 10 µs; Figure 3
Tsp = 25 °C; Figure 1
IS source (diode forward) current (DC) Tsp = 25 °C
ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp 10 µs
[1] Single device conducting.
Min
-
-
-
[1] -
[1] -
[1] -
-
55
55
[1] -
[1] -
Version
SOT363
Max
60
60
±20
0.49
0.31
0.99
0.41
+150
+150
Unit
V
V
V
A
A
A
W
°C
°C
0.34 A
0.69 A
9397 750 12758
Product data
Rev. 01 — 11 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
2 of 12


Part Number PMGD780SN
Description Dual N-channel mTrenchMOS standard level FET
Maker NXP Semiconductors
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