PMGD290XN Datasheet | NXP Semiconductors

Description Dual N-channel enhancement mode field-effect transistor in a plastic package using Trench MOS™ technology. 1.2 Features s Surface mounted package s Dual device s Low on-state resistance s Footprint 40% smaller than SOT23 s Fast switching s Low threshold voltage. 1.3 Applications s Driver circuits s Switching in portable appliances. 1.4 Quick reference data s VDS ≤ 20 V s Ptot ≤ 0.41 W s ID ≤ 0.86 A s RDSon ≤ 350 mΩ. 2. Pinning information Table 1: Pin 1 2 3 4 5 6 Pinning - SOT363 (SC-88), simplified outline and symbol Description source (s1) gate (g1) drain (d2) source (s2) gate (g2) drain (d1) s1 1 Top view 2 3 MSA370 Simplified outline 6 5 4 Symbol d1 d2 g1 s2 g2 MSD901 SOT363 (SC-88) Philips Semiconductors .. Dual N-channel µTrench MOS™ extremely low level FET 3. Ordering information Table 2: Ordering information Package Name PMGD290XN SC-88 Description Plastic surface mounted package; 6 leads Version SOT363 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM [1] Conditions 25 °C ≤ Tj ≤ 150 °C 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3 Tsp = 100 °C; VGS = 4.5 V; Figure 2 Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tsp = 25 °C; Figure 1 [1] [1] [1] Min - 55 - 55 [1] [1] Max 20 20 ±12 0.86 0.54 1.72 0.41 +150 +150 0.34 0.69 Unit V V V A A A W °C °C A A drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature Source-drain diode source (diode forward) current (DC) Tsp = 25 °C peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs Single device conducting. - 9397 750 12762 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data Rev. 01 - 26 February 2004 2 of 12 Philips...