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PMGD290XN

The PMGD290XN is Dual N-channel mTrenchMOS extremely low level FET designed by NXP Semiconductors.

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Datasheet preview – PMGD290XN

Datasheet Details

Part number PMGD290XN
Manufacturer NXP Semiconductors
File Size 122.64 KB
Description Dual N-channel mTrenchMOS extremely low level FET
Datasheet download datasheet PMGD290XN_NXPSemiconductors.pdf
Additional preview pages of the PMGD290XN datasheet.

Product details

Description

Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Features

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