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NXP Semiconductors Electronic Components Datasheet

PMG85XP Datasheet

MOSFET

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PMG85XP
20 V, 2 A P-channel Trench MOSFET
Rev. 1 — 28 June 2011
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a very small
SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
Low threshold voltage
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = -4.5 V; Tj = 25 °C
VGS = -4.5 V; ID = -2 A; Tj = 25 °C
Min Typ Max Unit
- - -20 V
-12 -
12 V
[1] - - -2 A
- 90 115 m
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.


NXP Semiconductors Electronic Components Datasheet

PMG85XP Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
PMG85XP
20 V, 2 A P-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning information
Symbol Description
D drain
D drain
G gate
S source
D drain
D drain
3. Ordering information
Simplified outline
654
123
SOT363 (TSSOP6)
Graphic symbol
D
G
S
017aaa094
Table 3. Ordering information
Type number
Package
Name
PMG85XP
TSSOP6
4. Marking
Description
plastic surface-mounted package; 6 leads
Version
SOT363
Table 4. Marking codes
Type number
PMG85XP
[1] % = placeholder for manufacturing site code
Marking code[1]
YA%
PMG85XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 June 2011
© NXP B.V. 2011. All rights reserved.
2 of 16


Part Number PMG85XP
Description MOSFET
Maker NXP Semiconductors
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PMG85XP Datasheet PDF






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