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PMFPB8032XP Datasheet

3.7A / 320mV VF P-channel MOSFET

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PMFPB8032XP
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky
combination
21 December 2012
Product data sheet
1. General description
Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench
MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)
Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118)
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
1.8 V RDSon rated for low-voltage gate drive
Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm
Exposed drain pad for excellent thermal conduction
Integrated ultra low VF MEGA Schottky diode
3. Applications
Charging switch for portable devices
DC-to-DC converters
Power management in battery-driven portables
Hard disk and computing power management
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
MOSFET transistor
VDS drain-source voltage Tj = 25 °C
- - -20 V
VGS gate-source voltage
-12 -
12 V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -3.7 A
Schottky diode
IF
forward current
Tsp ≤ 105 °C
- - 2A
VR
reverse voltage
Tamb = 25 °C
- - 20 V
MOSFET transistor static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -2.7 A; Tj = 25 °C
resistance
- 80 102 mΩ
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NXP Semiconductors Electronic Components Datasheet

PMFPB8032XP Datasheet

3.7A / 320mV VF P-channel MOSFET

No Preview Available !

NXP Semiconductors
PMFPB8032XP
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination
Symbol
Parameter
Schottky diode
VF forward voltage
Conditions
IF = 1 A; Tj = 25 °C
Min Typ Max Unit
- 320 365 mV
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 A anode
2 n.c. not connected
3 D drain
4 S source
5 G gate
6 K cathode
7 K cathode
8 D drain
Simplified outline
654
Graphic symbol
AG
S
78
123
Transparent top view
DFN2020-6 (SOT1118)
KD
aaa-003667
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMFPB8032XP
DFN2020-6
Description
plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals; body 2 x 2 x 0.65 mm
Version
SOT1118
7. Marking
Table 4. Marking codes
Type number
PMFPB8032XP
Marking code
1X
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
MOSFET transistor
VDS drain-source voltage Tj = 25 °C
PMFPB8032XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 December 2012
Min Max Unit
- -20 V
© NXP B.V. 2012. All rights reserved
2 / 16


Part Number PMFPB8032XP
Description 3.7A / 320mV VF P-channel MOSFET
Maker NXP Semiconductors
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PMFPB8032XP Datasheet PDF






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