Datasheet4U Logo Datasheet4U.com

PMFPB8032XP - 3.7A / 320mV VF P-channel MOSFET

Description

Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

2.

Features

  • 1.8 V RDSon rated for low-voltage gate drive Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm Exposed drain pad for excellent thermal conduction Integrated ultra low VF MEGA Schottky diode 3.

📥 Download Datasheet

Datasheet preview – PMFPB8032XP

Datasheet Details

Part number PMFPB8032XP
Manufacturer NXP Semiconductors
File Size 275.88 KB
Description 3.7A / 320mV VF P-channel MOSFET
Datasheet download datasheet PMFPB8032XP Datasheet
Additional preview pages of the PMFPB8032XP datasheet.

📁 Similar Datasheet

  • PMFPB8032XP - P-channel MOSFET (nexperia)
  • PMFPB8040XP - P-channel MOSFET-Schottky combination (NXP)
  • PMF02N65M - N-Channel MOSFETs (Potens semiconductor)
  • PMF03N80R - N-Channel MOSFETs (Potens semiconductor)
  • PMF04N100T - N-Channel MOSFETs (Potens semiconductor)
  • PMF04N65M - N-Channel MOSFETs (Potens semiconductor)
  • PMF05N50M - N-Channel MOSFETs (Potens semiconductor)
  • PMF08N60M - N-Channel MOSFETs (Potens semiconductor)
  • PMF08N65M - N-Channel MOSFETs (Potens semiconductor)
  • PMF08N70M - N-Channel MOSFETs (Potens semiconductor)
Other Datasheets by NXP Semiconductors
  • PMF170XP - 1A P-channel Trench MOSFET
  • PMF250XN - 0.9A N-channel Trench MOSFET
  • PMF63UN - single N-channel Trench MOSFET
  • PMF77XN - MOSFET
  • PMF780SN - N-channel uTrenchMOS standard level FET
  • PMF87EN - single N-channel Trench MOSFET

Full PDF Text Transcription

Click to expand full text
PMFPB8032XP 21 December 2012 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination Product data sheet 1. General description Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • • • • 1.8 V RDSon rated for low-voltage gate drive Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm Exposed drain pad for excellent thermal conduction Integrated ultra low VF MEGA Schottky diode 3.
Published: |