PMFPB8032XP mosfet equivalent, 3.7a / 320mv vf p-channel mosfet.
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1.8 V RDSon rated for low-voltage gate drive Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm Exposed drain pad for excellent th.
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Charging switch for portable devices DC-to-DC converters Power management in battery-driven port.
Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface.
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