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PMF63UN - single N-channel Trench MOSFET

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

  • Low threshold voltage.
  • Very fast switching.
  • Trench MOSFET technology 1.3.

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Datasheet Details

Part number PMF63UN
Manufacturer NXP Semiconductors
File Size 322.58 KB
Description single N-channel Trench MOSFET
Datasheet download datasheet PMF63UN Datasheet
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Full PDF Text Transcription

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SO T3 PMF63UN 20 V, single N-channel Trench MOSFET Rev. 1 — 22 March 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 23 1.2 Features and benefits  Low threshold voltage  Very fast switching  Trench MOSFET technology 1.3 Applications  Relay driver  High-speed line driver  Low-side loadswitch  Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 1.
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