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PMF63UN Datasheet

single N-channel Trench MOSFET

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PMF63UN
20 V, single N-channel Trench MOSFET
Rev. 1 — 22 March 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Low threshold voltage
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C; t 5 s
VGS = 4.5 V; ID = 1.8 A; Tj = 25 °C
Min Typ Max Unit
- - 20 V
-8 -
8V
[1] - - 1.9 A
- 63 74 m
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
G gate
S source
D drain
Simplified outline
3
12
SOT323 (SC-70)
Graphic symbol
D
G
S
017aaa253


NXP Semiconductors Electronic Components Datasheet

PMF63UN Datasheet

single N-channel Trench MOSFET

No Preview Available !

NXP Semiconductors
PMF63UN
20 V, single N-channel Trench MOSFET
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMF63UN
SC-70
4. Marking
Description
plastic surface-mounted package; 3 leads
Version
SOT323
Table 4. Marking codes
Type number
PMF63UN
[1] % = placeholder for manufacturing site code
5. Limiting values
Marking code[1]
V8%
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 4.5 V; Tamb = 25 °C; t 5 s
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Source-drain diode
IS source current
Tsp = 25 °C
Tamb = 25 °C
[1]
[1]
[1]
[2]
[1]
[1]
Min Max
- 20
-8 8
- 1.9
- 1.8
- 1.1
- 7.2
- 275
- 350
- 1785
-55 150
-55 150
-65 150
- 0.8
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Unit
V
V
A
A
A
A
mW
mW
mW
°C
°C
°C
A
PMF63UN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 March 2012
© NXP B.V. 2012. All rights reserved.
2 of 15


Part Number PMF63UN
Description single N-channel Trench MOSFET
Maker NXP Semiconductors
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PMF63UN Datasheet PDF






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