PMEG6010ETR Datasheet | NXP Semiconductors

10 October 2012 High-temperature 60 V, 1 A Schottky barrier rectifier Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits - Average forward current: IF(AV) ≤ 1 A - Reverse voltage: VR ≤ 60 V - Low forward voltage - High power capability due to clip-bonding technology - Small and flat lead SMD plastic package - AEC-Q101 qualified - High temperature Tj ≤ 175 °C 1.3 Applications - Low voltage rectification - High efficiency DC-to-DC conversion - Switch mode power supply - Reverse polarity protection http://..net/ 1.4 Quick reference data Table 1. Symbol IF IF(AV) Quick reference data Parameter forward current average forward current Conditions Tsp = 165 °C δ = 0.5 ; f = 20 k Hz; Tamb ≤ 140 °C; square wave δ = 0.5 ; f = 20 k Hz; Tsp ≤ 170 °C; square wave VR VF IR reverse voltage forward voltage reverse current Tj = 25 °C IF = 1 A; Tj = 25 °C Tj = 25 °C; VR = 60 V; tp ≤ 300 µs; δ ≤ 0.02 ; pulsed 460 30 60 530 60 V m V µA 1 A [1] Min - Typ - Max 1.4 1 Unit A A Scan or click this QR code to view the latest information for this product datasheet pdf - http://..net/ NXP Semiconductors High-temperature 60 V, 1 A Schottky barrier rectifier Symbol...