900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




NXP Semiconductors Electronic Components Datasheet

PMEG4010ETR Datasheet

High-temperature 40V 1A Schottky barrier rectifier

No Preview Available !

PMEG4010ETR
High-temperature 40 V, 1 A Schottky barrier rectifier
28 November 2012
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD123W small and flat
lead Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
Average forward current: IF(AV) ≤ 1 A
Reverse voltage: VR ≤ 40 V
Low forward voltage
High power capability due to clip-bonding technology
Small and flat lead SMD plastic package
AEC-Q101 qualified
High temperature Tj ≤ 175 °C
1.3 Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Reverse polarity protection
1.4 Quick reference data
Table 1.
Symbol
IF
IF(AV)
Quick reference data
Parameter
forward current
average forward
current
VR reverse voltage
VF forward voltage
IR reverse current
Conditions
Tsp = 165 °C
δ = 0.5 ; f = 20 kHz; Tamb ≤ 140 °C;
square wave
δ = 0.5 ; f = 20 kHz; Tsp ≤ 170 °C;
square wave
Tj = 25 °C
IF = 1 A; Tj = 25 °C
Tj = 25 °C; VR = 40 V; tp ≤ 300 µs;
δ ≤ 0.02 ; pulsed
Min Typ Max Unit
- - 1.4 A
[1] - - 1 A
- - 1A
- - 40 V
- 430 490 mV
- 10 50 µA
Scan or click this QR code to view the latest information for this product


NXP Semiconductors Electronic Components Datasheet

PMEG4010ETR Datasheet

High-temperature 40V 1A Schottky barrier rectifier

No Preview Available !

NXP Semiconductors
PMEG4010ETR
High-temperature 40 V, 1 A Schottky barrier rectifier
Symbol
trr
Parameter
Conditions
reverse recovery time IR = 0.5 A; IF = 0.5 A; IR(meas) = 0.1 A;
Tj = 25 °C
Min Typ Max Unit
- 4.4 - ns
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 K cathode[1]
2 A anode
Simplified outline
12
SOD123W
[1] The marking bar indicates the cathode.
Graphic symbol
1
2
sym001
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMEG4010ETR
SOD123W
Description
plastic surface mounted package; 2 leads
Version
SOD123W
4. Marking
Table 4. Marking codes
Type number
PMEG4010ETR
Marking code
EJ
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VR reverse voltage
Tj = 25 °C
IF forward current
Tsp = 165 °C
IF(AV)
average forward current
δ = 0.5 ; f = 20 kHz; Tamb ≤ 140 °C;
square wave
δ = 0.5 ; f = 20 kHz; Tsp ≤ 170 °C;
square wave
IFSM
non-repetitive peak forward
tp = 8 ms; Tj(init) = 25 °C; square wave
current
[1]
PMEG4010ETR
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 November 2012
Min Max Unit
- 40 V
- 1.4 A
- 1A
- 1A
- 50 A
© NXP B.V. 2012. All rights reserved
2 / 13


Part Number PMEG4010ETR
Description High-temperature 40V 1A Schottky barrier rectifier
Maker NXP Semiconductors
PDF Download

PMEG4010ETR Datasheet PDF






Similar Datasheet

1 PMEG4010ET MEGA Schottky barrier rectifiers
nexperia
2 PMEG4010ETP MEGA Schottky barrier rectifier
nexperia
3 PMEG4010ETR High-temperature 40V 1A Schottky barrier rectifier
NXP Semiconductors
4 PMEG4010ETR Schottky barrier rectifier
nexperia





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy