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PMDPB58UPE Datasheet, NXP Semiconductors

PMDPB58UPE mosfet equivalent, 20v dual p-channel trench mosfet.

PMDPB58UPE Avg. rating / M : 1.0 rating-11

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PMDPB58UPE Datasheet

Features and benefits


* Low threshold voltage
* Very fast switching
* Trench MOSFET technology
* 2 kV ElectroStatic Discharge (ESD) protection 1.3 Applications
* Relay dri.

Application


* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits 1.4 Quick referenc.

Description

Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. DF N2 1.2 Features and benefits
* Low thresh.

Image gallery

PMDPB58UPE Page 1 PMDPB58UPE Page 2 PMDPB58UPE Page 3

TAGS

PMDPB58UPE
20V
dual
P-channel
Trench
MOSFET
PMDPB55XP
PMDPB56XN
PMDPB56XNEA
NXP Semiconductors

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