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PHX18NQ11T Datasheet

N-channel TrenchMOS standard level FET

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PHX18NQ11T
N-channel TrenchMOS™ standard level FET
M3D308 Rev. 01 — 13 February 2004
Product data
1. Product profile
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1.1 Description
N-channel enhancement mode field-effect power transistor in a fully isolated plastic
package using TrenchMOS™ technology.
1.2 Features
s Low on-state resistance
s Isolated mounting base
s Fast switching
s Low thermal resistance
1.3 Applications
s DC-to-DC converters
s Switched-mode power supplies
1.4 Quick reference data
s VDS 110 V
s Ptot 31.2 W
s ID 12.5 A
s RDSon 90 m
2. Pinning information
Table 1: Pinning - SOT186A (TO-220F), simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 source (s)
mb
3 drain (d)
mb mounting base;
isolated
Symbol
d
g
MBB076
s
1 2 3 MBK110
SOT186A (TO-220F)


NXP Semiconductors Electronic Components Datasheet

PHX18NQ11T Datasheet

N-channel TrenchMOS standard level FET

No Preview Available !

Philips Semiconductors
PHX18NQ11T
N-channel TrenchMOS™ standard level FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
Description
Version
PHX18NQ11T
TO-220F
Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT186A
3 lead TO-220AB ‘full pack’
w w w . D a4t.a SLhime eitti4nUg.vcaolumes
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
IDM peak drain current
Ptot total power dissipation
25 °C Tj 150 °C
25 °C Tj 150 °C; RGS = 20 k
Th = 25 °C; VGS = 10 V; Figure 2 and 3
Th = 100 °C; VGS = 10 V Figure 2
Th = 25 °C; pulsed; tp 10 µs; Figure 3
Th = 25 °C; Figure 1
Tstg storage temperature
Tj junction temperature
Source-drain diode
IS source (diode forward) current (DC) Th = 25 °C
ISM peak source (diode forward) current Th = 25 °C; pulsed; tp 10 µs
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 7.5 A;
tp = 0.09 ms; VDD 15 V; RGS = 50 ;
VGS = 10 V; starting Tj = 25 °C
[1] External heatsink connected to mounting base.
Min
-
-
-
[1] -
[1] -
[1] -
[1] -
55
55
Max
110
110
±20
12.5
7.9
50.2
31.2
+150
+150
Unit
V
V
V
A
A
A
W
°C
°C
[1] -
[1] -
12.5 A
50.2 A
- 56 mJ
9397 750 12915
Product data
Rev. 01 — 13 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
2 of 12


Part Number PHX18NQ11T
Description N-channel TrenchMOS standard level FET
Maker NXP Semiconductors
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