900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




NXP Semiconductors Electronic Components Datasheet

PHP45NQ15T Datasheet

N-channel TrenchMOS standard level FET

No Preview Available !

PHP/PHB45NQ15T
www.DataSheet4U.com
N-channel TrenchMOS™ standard level FET
Rev. 01 — 8 November 2004
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode field effect transistor in a plastic package
using TrenchMOS™ technology.
1.2 Features
s Low on-state resistance
s Low thermal resistance
s Fast switching
s Low gate charge.
1.3 Applications
s DC-to-DC primary side switching
s AC-to-DC secondary side
rectification.
1.4 Quick reference data
s VDS 150 V
s RDSon 42 m
s ID 45.1 A
s Qgd = 10.3 nC (typ).
2. Pinning information
Table 1: Discrete pinning
Pin Description
Simplified outline
1 gate
2 drain
[1] mb
3 source
mb mounting base;
connected to drain
Symbol
mb D
G
mbb076 S
123
SOT78 (TO-220AB)
[1] It is not possible to make a connection to pin 2 of the SOT404 package.
2
13
SOT404 (D2-PAK)


NXP Semiconductors Electronic Components Datasheet

PHP45NQ15T Datasheet

N-channel TrenchMOS standard level FET

No Preview Available !

Philips Semiconductors
PHP/PHB45NQ15Twww.DataSheet4U.com
N-channel TrenchMOS™ standard level FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
Description
Version
PHP45NQ15T
TO-220AB Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 lead SOT78
TO-220AB
PHB45NQ15T
D2-PAK
Plastic single-ended surface mounted package (D2-PAK); 3 leads (one lead SOT404
cropped)
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
IDM peak drain current
Ptot total power dissipation
25 °C Tj 175 °C
25 °C Tj 175 °C; RGS = 20 k
Tmb = 25 °C; VGS = 10 V; Figure 2 and 3
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp 10 µs; Figure 3
Tmb = 25 °C; Figure 1
Tstg storage temperature
Tj junction temperature
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 °C
ISM peak source (diode forward) current Tmb = 25 °C; pulsed; tp 10 µs
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 19.1 A;
tp = 0.1 ms; VDD 150 V; RGS = 50 ;
VGS = 10 V; starting at Tj = 25 °C
Min Max Unit
- 150 V
- 150 V
- ±20 V
- 45.1 A
- 31.9 A
- 90.2 A
- 230 W
55 +175 °C
55 +175 °C
- 45.1 A
- 90.2 A
- 180 mJ
9397 750 14012
Product data sheet
Rev. 01 — 8 November 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
2 of 13


Part Number PHP45NQ15T
Description N-channel TrenchMOS standard level FET
Maker NXP Semiconductors
PDF Download

PHP45NQ15T Datasheet PDF






Similar Datasheet

1 PHP45NQ15T N-channel TrenchMOS standard level FET
NXP Semiconductors





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy