900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




NXP Semiconductors Electronic Components Datasheet

PHP32N06LT Datasheet

N-channel enhancement mode field effect transistor

No Preview Available !

www.DataSheet4U.com
PHP32N06LT; PHB32N06LT
N-channel enhancement mode field effect transistor
Rev. 01 — 06 November 2001
Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHP32N06LT in SOT78 (TO220AB)
PHB32N06LT in SOT404 (D2-PAK).
2. Features
s TrenchMOS™ technology
s Logic level compatible.
3. Applications
s General purpose switching
s Switched mode power supplies.
4. Pinning information
Table 1: Pinning - SOT78 (TO-220AB), SOT404 (D2-PAK), simplified outline and symbol
Pin Description
Simplified outline
Symbol
1 gate (g)
2 drain (d)
mb
[1]
mb
3 source (s)
mb mounting base;
connected to drain (d)
g
MBB076
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
d
s
[1] It is not possible to make connection to pin 2 of the SOT404 package.
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.


NXP Semiconductors Electronic Components Datasheet

PHP32N06LT Datasheet

N-channel enhancement mode field effect transistor

No Preview Available !

Philips Semiconductors
www.DataSheet4U.com
PHP32N06LT; PHB32N06LT
N-channel enhancement mode field effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
Tmb = 25 °C; VGS = 5 V
Tmb = 25 °C
Tj = 25 °C; VGS = 5 V; ID = 20 A
Tj = 25 °C; VGS = 4.5 V; ID = 20 A
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
VGSM
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
non-repetitive gate-source voltage
drain current (DC)
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj operating junction temperature
Source-drain diode
RGS = 20 k
tp 50 µs
Tmb = 25 °C; VGS = 5 V; Figure 2 and 3
Tmb = 100 °C; VGS = 5 V; Figure 2
Tmb = 25 °C; pulsed; tp 10 µs; Figure 3
Tmb = 25 °C; Figure 1
IS reverse drain current (DC)
ISM pulsed reverse drain current
Avalanche ruggedness
Tmb = 25 °C
Tmb = 25 °C; pulsed; tp 10 µs
WDSS non-repetitive avalanche energy
unclamped inductive load; ID = 20 A;
tp = 0.11 ms; VDS 25 V; VGS = 5 V;
RGS = 50 ; starting Tj = 25 °C
Typ Max Unit
- 60 V
- 34 A
- 97 W
- 175 °C
30 40 m
- 43 m
Min Max Unit
- 60 V
- 60 V
- ±15 V
- ±20 V
- 34 A
- 24 A
- 136 A
- 97 W
55 +175 °C
55 +175 °C
- 34 A
- 136 A
- 100 mJ
9397 750 09024
Product data
Rev. 01 — 06 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
2 of 13


Part Number PHP32N06LT
Description N-channel enhancement mode field effect transistor
Maker NXP Semiconductors
PDF Download

PHP32N06LT Datasheet PDF






Similar Datasheet

1 PHP32N06LT N-channel enhancement mode field effect transistor
NXP Semiconductors





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy