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PHP225NQ04T Datasheet

N-channel TrenchMOS standard level FET

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PHP/PHB225NQ04T
N-channel TrenchMOS™ standard level FET
Rev. 01 — 12 May 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
s Standard level threshold
s Very low on-state resistance.
1.3 Applications
s Motors, lamps, solenoids
s DC-to-DC converters
s Uninterruptible power supplies
s General industrial applications.
1.4 Quick reference data
s VDS 40 V
s Ptot 300 W
s ID 75 A
s RDSon 3.1 m.
2. Pinning information
Table 1: Pinning - SOT78 (TO-220AB) and SOT404 (D2-PAK), simplified outline and symbol
Pin Description
Simplified outline
Symbol
1 gate (g)
2 drain (d)
[1]
mb
mb
3 source (s)
mb mounting base;
connected to
drain (d)
g
mbb076
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
d
s


NXP Semiconductors Electronic Components Datasheet

PHP225NQ04T Datasheet

N-channel TrenchMOS standard level FET

No Preview Available !

Philips Semiconductors
PHP/PHB225NQ04Twww.DataSheet4U.com
N-channel TrenchMOS™ standard level FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
Description
Version
PHP225NQ04T
TO-220AB Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78
PHB225NQ04T
D2-PAK
Plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT404
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
25 °C Tj 175 °C
25 °C Tj 175 °C; RGS = 20 k
Tmb = 25 °C; VGS = 10 V; Figure 2 and 3
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp 10 µs; Figure 3
Tmb = 25 °C; Figure 1
IS source (diode forward) current (DC) Tmb = 25 °C
ISM peak source (diode forward) current Tmb = 25 °C; pulsed; tp 10 µs
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 75 A;
tp = 0.29 ms; VDD 40 V; RGS = 50 ;
VGS = 10 V; starting at Tj = 25 °C
Min Max Unit
- 40 V
- 40 V
- ±20 V
- 75 A
- 75 A
- 240 A
- 300 W
55 +175 °C
55 +175 °C
- 75 A
- 240 A
- 560 mJ
9397 750 13157
Product data
Rev. 01 — 12 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
2 of 13


Part Number PHP225NQ04T
Description N-channel TrenchMOS standard level FET
Maker NXP Semiconductors
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