PH1955L - N-channel TrenchMOS Iogic levelFET

Datasheet Summary

Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

Features

s Logic level threshold s 175 °C rated s Low on-state resistance s Surface-mounted package 1.3.

NXP Semiconductors

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Datasheet Details

Part number	PH1955L
Manufacturer	NXP Semiconductors
File Size	148.26 KB
Description	N-channel TrenchMOS Iogic levelFET
Datasheet	PH1955L Datasheet
Additional preview pages of the PH1955L datasheet.

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Full PDF Text Transcription

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PH1955L N-channel TrenchMOS logic level FET Rev. 01 — 15 August 2005 www.DataSheet4U.com Product data sheet 1. Product proﬁle 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features s Logic level threshold s 175 °C rated s Low on-state resistance s Surface-mounted package 1.3 Applications s DC-to-DC converters s Motors, lamps and solenoids s General purpose power switching s 12 V and 24 V loads 1.4 Quick reference data s VDS ≤ 55 V s RDSon ≤ 17.3 mΩ s ID ≤ 40 A s QGD = 8 nC (typ) 2.

Published: Apr 27, 2010 |