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PBSS9110Z - 1A PNP low VCEsat (BISS) transistor

General Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS8110Z.

Key Features

  • Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PBSS9110Z 100 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 — 11 December 2009 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS8110Z. 1.2 Features „ „ „ „ „ Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ „ „ „ „ High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g.