PBSS9110Z transistor equivalent, 1a pnp low vcesat (biss) transistor.
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* Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC Hi.
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* High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor contr.
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS8110Z.
1.2 Features
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* Low collector-emitter saturation voltage VCEs.
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