PBSS5160U Datasheet | NXP Semiconductors

ription PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN plement: PBSS4160U. 1.2 Features I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (h FE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I I I I I High voltage DC-to-DC conversion High voltage MOSFET gate driving High voltage motor control High voltage power switches (e.g. motors, fans) Automotive applications 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1] [2] Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = - 1 A; IB = - 100 m A [2] Conditions open base [1] Min - Typ 255 Max - 60 - 1 - 2 340 Unit V A A mΩ Device mounted on a ceramic PCB, Al2O3, standard footprint. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. NXP Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor w w w . D a t a S h e e t 4 U . c o m 2. Pinning information Table 2. Pin 1 2 3 Pinning Description base emitter collector 1 2 3 1 2 sym013 Simplified outline Graphic...