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PBSS5160U Datasheet

60V 1A PNP low VCEsat (BISS) transistor

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PBSS5160U
60 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 04 — 2 October 2008
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very small
SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4160U.
1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I High voltage DC-to-DC conversion
I High voltage MOSFET gate driving
I High voltage motor control
I High voltage power switches (e.g. motors, fans)
I Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VCEO
IC
ICM
RCEsat
collector-emitter voltage open base
collector current
peak collector current
collector-emitter saturation
resistance
single pulse;
tp 1 ms
IC = 1 A;
IB = 100 mA
-
[1] -
-
[2] -
- 60 V
- 1 A
- 2 A
255 340 m
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Pulse test: tp 300 µs; δ ≤ 0.02.


NXP Semiconductors Electronic Components Datasheet

PBSS5160U Datasheet

60V 1A PNP low VCEsat (BISS) transistor

No Preview Available !

NXP Semiconductors
PBSS5160Uw w w . D a t a S h e e t 4 U . c o m
60 V, 1 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
base
emitter
collector
Simplified outline Graphic symbol
33
12
1
2
sym013
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
PBSS5160U SC-70 plastic surface-mounted package; 3 leads
Version
SOT323
4. Marking
Table 4. Marking codes
Type number
PBSS5160U
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code[1]
53*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
open emitter
open base
open collector
-
-
-
[1] -
[2] -
[3] -
ICM
peak collector current
single pulse;
-
tp 1 ms
IB base current
-
IBM
peak base current
single pulse;
-
tp 1 ms
Max
80
60
5
0.7
0.86
1
2
Unit
V
V
V
A
A
A
A
300
1
mA
A
PBSS5160U_4
Product data sheet
Rev. 04 — 2 October 2008
© NXP B.V. 2008. All rights reserved.
2 of 14


Part Number PBSS5160U
Description 60V 1A PNP low VCEsat (BISS) transistor
Maker NXP Semiconductors
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PBSS5160U Datasheet PDF






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