60 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 04 — 2 October 2008
Product data sheet
1. Product proﬁle
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very small
SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4160U.
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efﬁciency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
I High voltage DC-to-DC conversion
I High voltage MOSFET gate driving
I High voltage motor control
I High voltage power switches (e.g. motors, fans)
I Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Min Typ Max Unit
collector-emitter voltage open base
peak collector current
tp ≤ 1 ms
IC = −1 A;
IB = −100 mA
- −60 V
- −1 A
- −2 A
255 340 mΩ
 Device mounted on a ceramic PCB, Al2O3, standard footprint.
 Pulse test: tp ≤ 300 µs; δ ≤ 0.02.