PBSS5160T datasheet, transistor equivalent, NXP Semiconductors

Features and benefits

* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High efficiency due to less heat generation
* Reduces P.

Application

* Major application segments: Automotive Telecom infrastructure Industrial
* Power management: DC-to-DC .

Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160T. 1.2 Features
* Low collector-emitter saturation voltage VCEsat
* High collecto.

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