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PBSS5160T - PNP Transistor

General Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4160T.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High efficiency due to less heat generation.
  • Reduces Printed-Circuit Board (PCB) area required.
  • Cost-effective replacement for medium power transistors BCP52 and BCX52 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PBSS5160T 60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 04 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160T. 1.2 Features „ Low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High efficiency due to less heat generation „ Reduces Printed-Circuit Board (PCB) area required „ Cost-effective replacement for medium power transistors BCP52 and BCX52 1.