900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




NXP Semiconductors Electronic Components Datasheet

PBSS5160T Datasheet

PNP Transistor

No Preview Available !

PBSS5160T
60 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 04 — 15 January 2010
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4160T.
1.2 Features
„ Low collector-emitter saturation voltage VCEsat
„ High collector current capability IC and ICM
„ High efficiency due to less heat generation
„ Reduces Printed-Circuit Board (PCB) area required
„ Cost-effective replacement for medium power transistors BCP52 and BCX52
1.3 Applications
„ Major application segments:
‹ Automotive
‹ Telecom infrastructure
‹ Industrial
„ Power management:
‹ DC-to-DC conversion
‹ Supply line switching
„ Peripheral driver:
‹ Driver in low supply voltage applications (e.g. lamps and LEDs)
‹ Inductive load drivers (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VCEO
IC
ICM
RCEsat
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
open base
t = 1 ms or limited
by Tj(max)
IC = 1 A;
IB = 100 mA
-
-
-
[1] -
- 60 V
- 1 A
- 2 A
220 330 mΩ
[1] Pulse test: tp 300 μs; δ ≤ 0.02.


NXP Semiconductors Electronic Components Datasheet

PBSS5160T Datasheet

PNP Transistor

No Preview Available !

Nexperia
PBSS5160T
60 V, 1 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
base
emitter
collector
Simplified outline Graphic symbol
3
12
3
1
2
006aab259
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
PBSS5160T
-
plastic surface-mounted package; 3 leads
4. Marking
Table 4. Marking codes
Type number
PBSS5160T
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code[1]
*U6
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
collector-base voltage open emitter
collector-emitter
voltage
open base
-
-
VEBO
IC
emitter-base voltage open collector
collector current
-
[1] -
[2] -
ICM peak collector current t = 1 ms or limited
by Tj(max)
IB base current
IBM
peak base current
tp 300 μs; δ ≤ 0.02
-
-
-
Version
SOT23
Max Unit
80 V
60 V
5 V
0.9 A
1 A
2 A
300
1
mA
A
PBSS5160T_4
Product data sheet
Rev. 04 — 15 January 2010
2 of 11
© Nexperia B.V. 2017. All rights reserved


Part Number PBSS5160T
Description PNP Transistor
Maker NXP Semiconductors
PDF Download

PBSS5160T Datasheet PDF






Similar Datasheet

1 PBSS5160DS 60V 1A PNP/PNP low VCEsat (BISS) transistor
NXP Semiconductors
2 PBSS5160K 60V 1A PNP low VCEsat (BISS) transistor
NXP Semiconductors
3 PBSS5160K 60V 1A PNP low VCEsat (BISS) transistor
NXP Semiconductors
4 PBSS5160PAP PNP/PNP low VCEsat (BISS) transistor
NXP
5 PBSS5160PAP 1A PNP/PNP low VCEsat (BISS) transistor
nexperia
6 PBSS5160PAPS PNP/PNP Transistor
nexperia
7 PBSS5160QA PNP low VCEsat (BISS) transistor
NXP
8 PBSS5160T PNP Transistor
NXP Semiconductors
9 PBSS5160T Silicon PNP transistor
BLUE ROCKET ELECTRONICS





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy