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PBSS5160K Datasheet

60V 1A PNP low VCEsat (BISS) transistor

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PBSS5160K
60 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 03 — 6 October 2008
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small
SOT346 (SC-59A) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4160K.
1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I High voltage DC-to-DC conversion
I High voltage MOSFET gate driving
I High voltage motor control
I High voltage power switches (e.g. motors, fans)
I Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VCEO
IC
ICM
RCEsat
collector-emitter voltage open base
collector current
peak collector current
collector-emitter saturation
resistance
single pulse;
tp 1 ms
IC = 1 A;
IB = 100 mA
-
[1] -
-
[2] -
- 60 V
- 1 A
- 2 A
255 340 m
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Pulse test: tp 300 µs; δ ≤ 0.02.


NXP Semiconductors Electronic Components Datasheet

PBSS5160K Datasheet

60V 1A PNP low VCEsat (BISS) transistor

No Preview Available !

NXP Semiconductors
PBSS5160Kwww.DataSheet4U.com
60 V, 1 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
base
emitter
collector
Simplified outline Graphic symbol
33
12
1
2
sym013
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
PBSS5160K SC-59A plastic surface-mounted package; 3 leads
4. Marking
Table 4. Marking codes
Type number
PBSS5160K
Marking code
XA
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
collector-base voltage open emitter
-
VCEO
collector-emitter
voltage
open base
-
VEBO
IC
emitter-base voltage open collector
collector current
-
[1] -
[2] -
[3] -
ICM peak collector current single pulse; tp 1 ms
-
IB base current
-
IBM
peak base current
single pulse; tp 1 ms
-
Ptot total power dissipation Tamb 25 °C
[1] -
[2] -
[3] -
Version
SOT346
Max Unit
80 V
60 V
5
0.7
0.86
1
2
300
1
250
350
425
V
A
A
A
A
mA
A
mW
mW
mW
PBSS5160K_3
Product data sheet
Rev. 03 — 6 October 2008
© NXP B.V. 2008. All rights reserved.
2 of 14


Part Number PBSS5160K
Description 60V 1A PNP low VCEsat (BISS) transistor
Maker NXP Semiconductors
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PBSS5160K Datasheet PDF






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