PBSS5160K
description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT346 (SC-59A) Surface-Mounted Device (SMD) plastic package. NPN plement: PBSS4160K.
1.2 Features
I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (h FE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I I I I I High voltage DC-to-DC conversion High voltage MOSFET gate driving High voltage motor control High voltage power switches (e.g. motors, fans) Automotive applications
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM RCEsat
[1] [2]
Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC =
- 1 A; IB =
- 100 m A
[2]
Conditions open base
[1]
Min
- Typ 255
Max
- 60
- 1
- 2 340
Unit V A A mΩ
Device...
