PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT346 (SC-59A) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4160K.
Key Features
I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3.
Full PDF Text Transcription for PBSS5160K (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
PBSS5160K. For precise diagrams, and layout, please refer to the original PDF.
PBSS5160K 60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 — 6 October 2008 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description PNP low VCE...
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oduct data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT346 (SC-59A) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160K. 1.2 Features I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I I I I I High voltage DC-to-DC conversion High voltage MOSFET gate driving High voltage motor control H
PBSS5160K Datasheet
