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PBSS5160DS Datasheet

60V 1A PNP/PNP low VCEsat (BISS) transistor

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PBSS5160DS
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60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
Rev. 03 — 9 October 2008
Product data sheet
1. Product profile
1.1 General description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a small
SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4160DS.
1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I Dual low power switches (e.g. motors, fans)
I Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VCEO
IC
ICM
RCEsat
collector-emitter voltage open base
collector current
peak collector current
collector-emitter saturation
resistance
single pulse;
tp 1 ms
IC = 1 A;
IB = 100 mA
-
[1] -
-
[2] -
- 60 V
- 1 A
- 2 A
250 330 m
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Pulse test: tp 300 µs; δ ≤ 0.02.


NXP Semiconductors Electronic Components Datasheet

PBSS5160DS Datasheet

60V 1A PNP/PNP low VCEsat (BISS) transistor

No Preview Available !

NXP Semiconductors
PBSS5160DSw w w . D a t a S h e e t 4 U . c o m
60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
Simplified outline Graphic symbol
654
654
123
TR2
TR1
123
sym018
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
PBSS5160DS SC-74 plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
4. Marking
Table 4. Marking codes
Type number
PBSS5160DS
Marking code
A5
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
VCBO
VCEO
collector-base voltage
collector-emitter
voltage
open emitter
open base
-
-
VEBO
IC
emitter-base voltage
collector current
open collector
-
[1] -
[2] -
[3] -
ICM peak collector current single pulse; tp 1 ms -
IB base current
-
IBM
peak base current
single pulse; tp 1 ms
-
Max Unit
80 V
60 V
5
0.77
0.9
1
2
300
1
V
A
A
A
A
mA
A
PBSS5160DS_3
Product data sheet
Rev. 03 — 9 October 2008
© NXP B.V. 2008. All rights reserved.
2 of 14


Part Number PBSS5160DS
Description 60V 1A PNP/PNP low VCEsat (BISS) transistor
Maker NXP Semiconductors
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