PBSS5160DS transistor equivalent, 60v 1a pnp/pnp low vcesat (biss) transistor.
I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to .
I Dual low power switches (e.g. motors, fans) I Automotive applications
1.4 Quick reference data
Table 1. Symbol VCEO I.
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160DS.
1.2 Features
I I I I I Low collector-emitter saturation voltage VCEsat High co.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 171.25KB)