PBSS5160DS - 60V 1A PNP/PNP low VCEsat (BISS) transistor

NXP Semiconductors

Datasheet Details

Part number	PBSS5160DS
Manufacturer	NXP ↗ Semiconductors
File Size	171.25 KB
Description	60V 1A PNP/PNP low VCEsat (BISS) transistor
Datasheet	PBSS5160DS_NXPSemiconductors.pdf

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efﬁciency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

📁 PBSS5160DS Similar Datasheet

Other Datasheets by NXP Semiconductors

Published: Mar 25, 2010 |