PBSS5160DS Datasheet | NXP Semiconductors

description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN plement: PBSS4160DS. 1.2 Features I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (h FE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I Dual low power switches (e.g. motors, fans) I Automotive applications 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1] [2] Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = - 1 A; IB = - 100 m A [2] Conditions open base [1] Min - Typ 250 Max - 60 - 1 - 2 330 Unit V A A mΩ Device mounted on a ceramic PCB, Al2O3, standard footprint. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. NXP Semiconductors 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor w w w . D a t a S h e e t 4 U . c o m 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning Description emitter TR1 base TR1 collector TR2 emitter TR2 base TR2 collector TR1 1 2 sym018 Simplified outline 6 5 4 Graphic symbol 6 5 4 TR2 1 2 3 TR1 3. Ordering information Table 3. Ordering information Package Name PBSS5160DS SC-74 Description plastic surface-mounted package (TSOP6); 6 leads Version SOT457 Type number 4. Marking Table 4. Marking codes Marking code A5 Type number PBSS5160DS 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current Conditions open emitter open base open...