PBSS5130T datasheet, transistor equivalent, NXP Semiconductors

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Features and benefits

* Low collector-emitter saturation voltage VCEsat
* High collector current capability: IC and ICM
* Higher efficiency leading to less heat generation
* Re.

Application

APPLICATIONS
* Power management
– DC/DC converters
– Supply line switching
&nbs.

Description

PARAMETER collector-emitter voltage collector current (DC) repetitive peak collector current equivalent on-resistance MAX. −30 −1 −1.5 220 UNIT V A A mΩ 3 3 1 DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. Top view 2 1 2 MAM256 .

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