PBSS5130T
PBSS5130T is PNP Transistor manufactured by NXP Semiconductors.
DISCRETE SEMICONDUCTORS
..
DATA SHEET book, halfpage
M3D088
PBSS5130T 30 V, 1 A PNP low VCEsat (BISS) transistor
Product specification 2003 Dec 12
Philips Semiconductors
.. Product specification
30 V, 1 A PNP low VCEsat (BISS) transistor
Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability: IC and ICM
- Higher efficiency leading to less heat generation
- Reduced printed-circuit board requirements
- Cost effective alternative to MOSFETS in specific applications. APPLICATIONS
- Power management
- DC/DC converters
- Supply line switching
- Battery charger
- LCD backlighting.
- Peripheral drivers
- Driver in low supply voltage applications (e.g. lamps and LEDs)
- Inductive load driver (e.g. relays, buzzers and motors). handbook, halfpage
QUICK REFERENCE DATA SYMBOL VCEO IC ICRP RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) repetitive peak collector current equivalent on-resistance MAX.
- 30
- 1
- 1.5 220 UNIT V A A mΩ
3 3 1
DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package.
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