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NXP Semiconductors Electronic Components Datasheet

PBSS5130T Datasheet

PNP Transistor

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PBSS5130T
30 V; 1 A PNP low VCEsat (BISS) transistor
9 July 2013
Product data sheet
1. General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
Small SMD plastic package
Low collector-emitter saturation voltage VCEsat
High collector current capability: IC and ICM
Higher efficiency due to less heat generation
AEC-Q101 qualified
3. Applications
DC-to-DC conversion
Supply line switching
Battery charger
LCD backlighting
Driver in low supply voltage applications (e.g. lamps and LEDs)
4. Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current single pulse; tp ≤ 1 ms
collector-emitter
saturation resistance
IC = -500 mA; IB = -50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - -30 V
- - -1 A
- - -3 A
- - 220 mΩ
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NXP Semiconductors Electronic Components Datasheet

PBSS5130T Datasheet

PNP Transistor

No Preview Available !

NXP Semiconductors
PBSS5130T
30 V; 1 A PNP low VCEsat (BISS) transistor
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 B base
2 E emitter
3 C collector
Simplified outline
3
12
TO-236AB (SOT23)
Graphic symbol
C
B
E
sym132
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PBSS5130T
TO-236AB
Description
plastic surface-mounted package; 3 leads
Version
SOT23
7. Marking
Table 4. Marking codes
Type number
PBSS5130T
Marking code
[1]
%3E
[1] % = placeholder for manufacturing site code
PBSS5130T
Product data sheet
All information provided in this document is subject to legal disclaimers.
9 July 2013
© NXP N.V. 2013. All rights reserved
2 / 11


Part Number PBSS5130T
Description PNP Transistor
Maker NXP Semiconductors
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PBSS5130T Datasheet PDF






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