PBSS4540X transistor equivalent, 40v 5a npn low vcesat (biss) transistor.
* High hFE and low VCEsat at high current operation
* High collector current capability: IC maximum 4 A
* High efficiency leading to less heat generation. APP.
* Medium power peripheral drivers (e.g. fan and motor)
* Strobe flash units for DSC and mobile phones
* Inve.
NPN low VCEsat transistor in a medium power SOT89 (SC-62) package. PNP complement: PBSS5540X. MARKING TYPE NUMBER PBSS4540X Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME.
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