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PBSS4540X Datasheet

40V 5A NPN low VCEsat (BISS) transistor

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DISCRETE SEMICONDUCTORS
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DATA SHEET
book, halfpage
M3D109
PBSS4540X
40 V, 5 A
NPN low VCEsat (BISS) transistor
Product specification
Supersedes data of 2004 Jun 11
2004 Nov 04


NXP Semiconductors Electronic Components Datasheet

PBSS4540X Datasheet

40V 5A NPN low VCEsat (BISS) transistor

No Preview Available !

Philips Semiconductors
40 V, 5 A
NPN low VCEsat (BISS) transistor
wPwrwo.dDuactat Sshpeeect4ifiUc.caotimon
PBSS4540X
FEATURES
High hFE and low VCEsat at high current operation
High collector current capability: IC maximum 4 A
High efficiency leading to less heat generation.
APPLICATIONS
Medium power peripheral drivers (e.g. fan and motor)
Strobe flash units for DSC and mobile phones
Inverter applications (e.g. TFT displays)
Power switch for LAN and ADSL systems
Medium power DC-to-DC conversion
Battery chargers.
DESCRIPTION
NPN low VCEsat transistor in a medium power SOT89
(SC-62) package.
PNP complement: PBSS5540X.
MARKING
TYPE NUMBER
PBSS4540X
MARKING CODE(1)
*1B
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO
IC
ICM
RCEsat
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
MAX.
40
4
10
71
UNIT
V
A
A
m
PINNING
PIN
1 emitter
2 collector
3 base
DESCRIPTION
321
2
3
1
sym042
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PBSS4540X
NAME
SC-62
PACKAGE
DESCRIPTION
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
VERSION
SOT89
2004 Nov 04
2


Part Number PBSS4540X
Description 40V 5A NPN low VCEsat (BISS) transistor
Maker NXP Semiconductors
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PBSS4540X Datasheet PDF






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