PBSS4140DPN transistor equivalent, 40 v low vcesat npn/pnp transistor.
* 600 mW total power dissipation
* Low collector-emitter saturation voltage
* High current capability
* Improved device reliability due to reduced heat ge.
* General purpose switching and muting
* LCD backlighting
* Supply line switching circuits
* Battery dri.
TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current peak collector current NPN PNP equivalent on-resistance MAX. 40 1 2 − − <500 UNIT V A A − − mΩ
6
5
4
DESCRIPTION
TR2
NPN/PNP low VCEsat transistor pair in an S.
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