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PBRN113E Datasheet, NXP Semiconductors

PBRN113E rets equivalent, npn 800 ma 40 v biss rets.

PBRN113E Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 188.25KB)

PBRN113E Datasheet

Features and benefits

I 800 mA output current capability I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduce.

Application

I Digital application in automotive and industrial segments I Medium current peripheral driver I Switching loads 1.4 Qu.

Description

800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Package NXP PBRN113EK PBRN113ES[1] PBRN113ET [1] Type number JEITA SC-59A SC-43A - JEDEC TO-2.

Image gallery

PBRN113E Page 1 PBRN113E Page 2 PBRN113E Page 3

TAGS

PBRN113E
NPN
800
BISS
RETs
NXP Semiconductors

Manufacturer


NXP (https://www.nxp.com/) Semiconductors

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