NPIC6C4894 Key Features
- Specified from 40 C to +125 C
- Low RDSon
- 12 Power EDNMOS transistor outputs of 100 mA continuous current
- 250 mA current limit capability
- Output clamping voltage 33 V
- 30 mJ avalanche energy capability
- Low power consumption
- Latch-up performance exceeds 100 mA per JESD 78 Class II level A
- ESD protection
- HBM JS-2011 Class 2 exceeds 2500 V
