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CGD914MI - 20 dB gain power doubler amplifier

General Description

DESCRIPTION Hybrid amplifier module in a SOT115J package operating at a voltage supply of 24 V (DC), employing both GaAs and Si dies.

Key Features

  • Excellent linearity.
  • Extremely low noise.
  • Excellent return loss properties.
  • Rugged construction.
  • Gold metallization ensures excellent reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D252 CGD914; CGD914MI 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 2000 Jul 25 2001 Nov 01 www.DataSheet.in NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier FEATURES  Excellent linearity  Extremely low noise  Excellent return loss properties  Rugged construction  Gold metallization ensures excellent reliability. APPLICATIONS  CATV systems operating in the 40 to 870 MHz frequency range.