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CGD1044HI Datasheet

25 dB gain GaAs high output power doubler

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CGD1044HI
www.DataSheet4U.com
1 GHz, 25 dB gain GaAs high output power doubler
Rev. 01 — 21 September 2009
Product data sheet
1. Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V
Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
1.2 Features
I Excellent linearity
I Superior levels of ESD protection
I Extremely low noise
I Excellent return loss properties
I Gain compensation over temperature
I Rugged construction
I Unconditionally stable
I Thermally optimized design
I Compliant to Directive 2002/95/EC, regarding Restriction of the use of certain
Hazardous Substances (RoHS)
I Integrated ring wave surge protection
1.3 Applications
I CATV systems operating in the 40 MHz to 1003 MHz frequency range
1.4 Quick reference data
Table 1. Quick reference data
Bandwidth 40 MHz to 1003 MHz; VB = 24 V (DC); ZS = ZL = 75 ; Tmb = 35 °C; unless otherwise
specified.
Symbol Parameter
Conditions
Min Typ Max Unit
Gp
CTB
CCN
Itot
power gain
composite triple beat
carrier-to-composite noise
total current
f = 50 MHz
f = 1003 MHz
Vo = 56.4 dBmV at 1003 MHz
Vo = 56.4 dBmV at 1003 MHz
- 23.2 - dB
23.5 24.4 25.5 dB
[1] - 75 69 dBc
[1] 57 63 -
dBc
[2] - 440 460 mA
[1] 79 NTSC channels [f = 54 MHz to 550 MHz] + 75 digital channels [f = 550 MHz to 1003 MHz] (6 dB offset);
tilt extrapolated to 13.5 dB at 1003 MHz.
[2] Direct Current (DC).


NXP Semiconductors Electronic Components Datasheet

CGD1044HI Datasheet

25 dB gain GaAs high output power doubler

No Preview Available !

NXP Semiconductors
CGD1044HI
www.DataSheet4U.com
1 GHz, 25 dB gain GaAs high output power doubler
2. Pinning information
Table 2.
Pin
1
2, 3
5
7, 8
9
Pinning
Description
input
common
+VB
common
output
Simplified outline Graphic symbol
13579
5
19
23 78
sym095
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
CGD1044HI -
rectangular single-ended package; aluminium flange;
2 vertical mounting holes; 2 × 6-32 UNC and 2 extra
horizontal mounting holes; 7 gold-plated in-line leads
Version
SOT115J
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VB
Vi(RF)
VESD
supply voltage
RF input voltage
electrostatic discharge voltage
single tone
Human Body Model (HBM);
According JEDEC standard
22-A114E
Biased; According
IEC61000-4-2
Tstg storage temperature
Tmb mounting base temperature
[1] The ESD pulse of 2000 V corresponds to a class 2 sensitivity level.
Min Max Unit
- 30 V
- 75 dBmV
[1] - 2000 V
- 1500 V
40 +100 °C
20 +100 °C
CGD1044HI_1
Product data sheet
Rev. 01 — 21 September 2009
© NXP B.V. 2009. All rights reserved.
2 of 7


Part Number CGD1044HI
Description 25 dB gain GaAs high output power doubler
Maker NXP Semiconductors
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