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CGD1044HI - 25 dB gain GaAs high output power doubler

Description

Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

Features

  • I I I I I I I I I Excellent linearity Superior levels of ESD protection Extremely low noise Excellent return loss properties Gain compensation over temperature Rugged construction Unconditionally stable Thermally optimized design Compliant to Directive 2002/95/EC, regarding Restriction of the use of certain Hazardous Substances (RoHS) I Integrated ring wave surge protection 1.3.

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Datasheet Details

Part number CGD1044HI
Manufacturer NXP Semiconductors
File Size 76.30 KB
Description 25 dB gain GaAs high output power doubler
Datasheet download datasheet CGD1044HI Datasheet
Additional preview pages of the CGD1044HI datasheet.

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Full PDF Text Transcription

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CGD1044HI Rev. 01 — 21 September 2009 www.DataSheet4U.com 1 GHz, 25 dB gain GaAs high output power doubler Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies. 1.2 Features I I I I I I I I I Excellent linearity Superior levels of ESD protection Extremely low noise Excellent return loss properties Gain compensation over temperature Rugged construction Unconditionally stable Thermally optimized design Compliant to Directive 2002/95/EC, regarding Restriction of the use of certain Hazardous Substances (RoHS) I Integrated ring wave surge protection 1.
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