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CGD1044HI Datasheet 25 Db Gain Gaas High Output Power Doubler

Manufacturer: NXP Semiconductors

Overview: CGD1044HI Rev. 01 — 21 September 2009 www.DataSheet4U.com 1 GHz, 25 dB gain GaAs high output power doubler Product data sheet 1. Product profile 1.

General Description

Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

1.2

Key Features

  • I I I I I I I I I Excellent linearity Superior levels of ESD protection Extremely low noise Excellent return loss properties Gain compensation over temperature Rugged construction Unconditionally stable Thermally optimized design Compliant to Directive 2002/95/EC, regarding Restriction of the use of certain Hazardous Substances (RoHS) I Integrated ring wave surge protection 1.3.

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