CGD1044H Datasheet | NXP Semiconductors

1 GHz, 25 d B gain high output power doubler Rev. 01 - 10 October 2007 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) Ga As dies. CAUTION .. This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I I I I I I I High output power capability Excellent linearity Extremely low noise Excellent return loss properties Rugged construction Unconditionally stable Thermal optimized design 1.3 Applications I CATV systems operating in the 40 MHz to 1000 MHz frequency range 1.4 Quick reference data Table 1. Quick reference data Bandwidth to 1000 MHz; VB = 24 V (DC); Tmb = 35 °C; unless otherwise specified. Symbol Gp Itot [1] Parameter power gain total current Conditions f = 45 MHz f = 1000 MHz [1] Min 24.0 430 Typ 24.0 25.0 450 Max 26.0 470 Unit d B d B m A Direct Current (DC). NXP Semiconductors 1 GHz, 25 d B gain high output power doubler 2. Pinning information Table 2. Pin 1 2, 3 5 7, 8 9 Pinning Description input mon +VB mon output 2 3 7 8 sym095 Simplified...