Datasheet4U Logo Datasheet4U.com

CGD1044H - 25 dB gain high output power doubler

Description

Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

This device is sensitive to ElectroStatic Discharge (ESD).

Features

  • I I I I I I I High output power capability Excellent linearity Extremely low noise Excellent return loss properties Rugged construction Unconditionally stable Thermal optimized design 1.3.

📥 Download Datasheet

Datasheet preview – CGD1044H

Datasheet Details

Part number CGD1044H
Manufacturer NXP Semiconductors
File Size 81.57 KB
Description 25 dB gain high output power doubler
Datasheet download datasheet CGD1044H Datasheet
Additional preview pages of the CGD1044H datasheet.

📁 Similar Datasheet

  • CGD1046HI - 27DB Gain GaAs High Output Power Doubler Hybrid amplifier module (NXP)
  • CGD1200HB2P-BM3 - Dual Channel Differential Isolated Gate Driver (Wolfspeed)
  • CGD15FB45P1 - Six Channel SiC MOSFET Driver (Cree)
  • CGD65A130S2 - GaN HEMT (Cambridge GaN Devices)
  • CGD914 - CATV amplifier module (NXP)
  • CGD923 - 870 MHz/ 20 dB gain power doubler amplifier (NXP)
  • CGDM-H-xxxx - DC-DC Converter (Gaia)
  • CGDM-J-xxxx - DC-DC Converter (Gaia)
  • CGDM-xxxx - DC-DC Converter (Gaia)
  • CGDT76 - Gate Driver Transformer (Sumida Corporation)
Other Datasheets by NXP Semiconductors
  • CGD1044HI - 25 dB gain GaAs high output power doubler
  • CGD1040HI - 1 GHz 20 dB gain GaAs high output power doubler
  • CGD1042H - 23 dB gain high output power doubler
  • CGD1042HI - 1 GHz 22 dB gain GaAs high output power doubler
  • CGD914MI - 20 dB gain power doubler amplifier

Full PDF Text Transcription

Click to expand full text
CGD1044H 1 GHz, 25 dB gain high output power doubler Rev. 01 — 10 October 2007 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies. CAUTION www.DataSheet4U.com This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I I I I I I I High output power capability Excellent linearity Extremely low noise Excellent return loss properties Rugged construction Unconditionally stable Thermal optimized design 1.3 Applications I CATV systems operating in the 40 MHz to 1000 MHz frequency range 1.4 Quick reference data Table 1.
Published: |